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Recovery method of copper-indium-gallium-selenium waste materials

A technology of copper indium gallium selenide and recovery method, which is applied in the direction of element selenium/tellurium, improvement of process efficiency, photography process, etc., can solve the problems of large environmental pollution and waste water, and achieve the goals of reducing pollution, simple process and reducing emissions Effect

Inactive Publication Date: 2018-10-12
HANERGY NEW MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the recycling process of copper indium gallium selenium waste disclosed in the prior art all uses chemical leaching. The problem of chemical leaching is that it produces a lot of waste water and causes great environmental pollution.

Method used

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  • Recovery method of copper-indium-gallium-selenium waste materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] Put the copper indium gallium selenium waste into a vacuum furnace for distillation. The vacuum degree of the vacuum furnace is 5Pa, the distillation temperature is 400°C, and the distillation time is 2 hours. Selenium and distillation waste are obtained by condensing and separating in a condenser; the purity of selenium powder is > 99.9%, the recovery rate> 99%;

[0068] The above-mentioned distillation waste is used as the anode, and the stainless steel plate is used as the cathode. The distillation waste is dissolved in the copper sulfate electrolyte in the electrolytic cell for electrolysis. The voltage of the electrolytic cell is 0.3V, the electrolysis temperature is 30°C, and the current density is 200A / m 2 , copper is precipitated in the cathode, and the remaining electrolyte solution containing indium gallium is obtained; the copper purity is >99.99%;

[0069] adjusting the pH value of the remaining electrolyte solution containing indium gallium to 0.01, using P...

Embodiment 2

[0073] Put the copper indium gallium selenide waste into a vacuum furnace for distillation. The vacuum degree of the vacuum furnace is 30Pa, the distillation temperature is 600°C, and the distillation time is 3 hours. Selenium and distillation waste are obtained after separation by a condenser; the purity of selenium powder is >99.9 %, recovery > 98%;

[0074] The above-mentioned distillation waste is used as the anode, and the stainless steel plate is used as the cathode. The distillation waste is dissolved in the copper sulfate electrolyte in the electrolytic cell for electrolysis. The voltage of the electrolytic cell is 0.5V, the electrolysis temperature is 60°C, and the current density is 400A / m 2 , depositing copper in the cathode, and obtaining the remaining electrolyte containing indium gallium; wherein, the purity of copper is >99.99%;

[0075] Adjusting the pH value of the remaining electrolyte containing indium gallium to 1, using a P204 extractant to obtain an indiu...

Embodiment 3

[0079] Put the copper indium gallium selenium waste into a vacuum furnace for distillation. The vacuum degree of the vacuum furnace is 10Pa, the distillation temperature is 450°C, and the distillation time is 2.3 hours. Selenium and distillation waste are obtained through separation by a condenser; the purity of the selenium powder is >99.9 %, recovery > 99%;

[0080] The above-mentioned distillation waste is used as the anode, and the stainless steel plate is used as the cathode. In the electrolytic cell, the distillation waste is dissolved in copper sulfate electrolyte for electrolysis. The voltage of the electrolytic cell is 0.35V, the electrolysis temperature is 35°C, and the current density is 250A / m 2 , depositing copper in the cathode, and obtaining the remaining electrolyte containing indium gallium; wherein, the purity of copper is >99.99%;

[0081] Adjusting the pH value of the remaining electrolyte solution containing indium gallium to 0.2, using a P204 extractant t...

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Abstract

The embodiment of the invention provides a recovery method of copper-indium-gallium-selenium waste materials. The method comprises the steps of performing vacuum distillation on the copper-indium-gallium-selenium waste materials, and separating so as to obtain selenium and distillation waste materials; electrolyzing the distillation waste materials so as to obtain copper and residual electrolyte containing indium and gallium; and separating the residual electrolyte containing indium and gallium so as to obtain indium and gallium. The invention provides a novel recovery idea of the copper-indium-gallium-selenium waste materials, the process is simple, and the environmental pollution of the copper-indium-gallium-selenium waste materials is reduced; a proper amount of copper sulfate crystal and sulfuric acid are added to raffinate so as to prepare copper sulfate electrolyte to continue to be used for electrolyzing and distilling the waste materials so as to obtain copper, so that the flowof the copper sulfate electrolyte forms a closed cycle, the discharge of waste water is reduced, and the environmental pollution is reduced.

Description

technical field [0001] The invention relates to the technical field of recycling metal and non-metal waste materials, in particular to a method for recycling copper indium gallium selenide waste materials. Background technique [0002] Copper indium gallium selenide thin film solar cell is a kind of efficient and convenient solar cell. Compared with the crystalline silicon solar cell currently on the market, it has the advantages of good flexibility, high conversion rate and wide application range. It will be the mainstream of the development of the photovoltaic industry in the future. . In the production process of CIGS solar cells, a large amount of waste materials will be generated. Except for CIGS, these waste materials contain less impurities and have great recycling value. The current recycling methods for this kind of waste include: electrolysis method, sulfate roasting method, acid dissolution method, etc. [0003] In the prior art, copper indium gallium selenide w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B7/00C25C1/12C22B58/00
CPCC22B7/00C22B58/00C25C1/12C22B7/001C22B7/006C22B15/0067Y02E10/541Y02P10/20Y02P70/50C01B19/02C22B9/02C22B3/32C22B3/3846
Inventor 谭明亮李胜春潘勇进刘凯华
Owner HANERGY NEW MATERIAL TECH CO LTD
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