Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polypyrrole surface-modified one-dimensional silicon-based gas sensitive material and preparation method thereof

A surface modification and gas-sensing material technology, applied in the field of gas-sensing materials working at room temperature, can solve the problems of low sensitivity and limited application, and achieve the effects of improving sensitivity, improving diffusion capacity, and improving sensitivity and response

Active Publication Date: 2018-08-28
TIANJIN UNIV
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon nanowires are used in the field of gas sensors. Their room temperature sensitivity and material system are highly compatible with silicon-based CMOS. Application of Sensitive Low Power Gas Sensor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polypyrrole surface-modified one-dimensional silicon-based gas sensitive material and preparation method thereof
  • Polypyrrole surface-modified one-dimensional silicon-based gas sensitive material and preparation method thereof
  • Polypyrrole surface-modified one-dimensional silicon-based gas sensitive material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Cleaning of monocrystalline silicon wafers

[0033] Silicon wafers were ultrasonically cleaned in hydrogen peroxide (10wt% hydrogen peroxide aqueous solution) and concentrated sulfuric acid (98wt% by mass) at a volume ratio of 4:1 for 10 minutes, and then placed in acetone solvent, absolute ethanol, and deionized water successively. Ultrasonic cleaning was performed for 5-10 minutes to remove surface oil and organic impurities, and then dried thoroughly in an infrared oven.

[0034] (2) Configure chemical etching solution

[0035] Dissolving silver nitrate in hydrofluoric acid aqueous solution, the concentration of hydrofluoric acid in the obtained solution is 5M, and the concentration of silver nitrate is 0.025M. (3) Metal-assisted chemical etching

[0036] Putting the silicon wafer into the solution prepared in step (2) for etching, the etching time is 150 min.

[0037] (4) Clean the etched silicon wafer

[0038] After the silicon chip obtained in step (3) is ...

Embodiment 2

[0050] (1) Cleaning of monocrystalline silicon wafers

[0051] Silicon wafers were ultrasonically cleaned in hydrogen peroxide (10wt% hydrogen peroxide aqueous solution) and concentrated sulfuric acid (98wt% by mass) at a volume ratio of 4:1 for 10 minutes, and then placed in acetone solvent, absolute ethanol, and deionized water successively. Ultrasonic cleaning was performed for 5-10 minutes to remove surface oil and organic impurities, and then dried thoroughly in an infrared oven.

[0052] (2) Configure chemical etching solution

[0053] Dissolving silver nitrate in hydrofluoric acid aqueous solution, the concentration of hydrofluoric acid in the obtained solution is 3M, and the concentration of silver nitrate is 0.02M.

[0054] (3) Metal-assisted chemical etching

[0055] Putting the silicon wafer into the solution prepared in step (2) for etching, the etching time is 180 min.

[0056] (4) Clean the etched silicon wafer

[0057] After the silicon chip obtained in step...

Embodiment 3

[0069] (1) Cleaning of monocrystalline silicon wafers

[0070] Silicon wafers were ultrasonically cleaned in hydrogen peroxide (10wt% hydrogen peroxide aqueous solution) and concentrated sulfuric acid (98wt% by mass) at a volume ratio of 4:1 for 10 minutes, and then placed in acetone solvent, absolute ethanol, and deionized water successively. Ultrasonic cleaning was performed for 5-10 minutes to remove surface oil and organic impurities, and then dried thoroughly in an infrared oven.

[0071] (2) Configure chemical etching solution

[0072] Dissolving silver nitrate in hydrofluoric acid aqueous solution, the concentration of hydrofluoric acid in the obtained solution is 6M, and the concentration of silver nitrate is 0.03M.

[0073] (3) Metal-assisted chemical etching

[0074] Putting the silicon wafer into the solution prepared in step (2) for etching, the etching time is 90 minutes.

[0075] (4) Clean the etched silicon wafer

[0076] After the silicon chip obtained in s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a polypyrrole surface-modified one-dimensional silicon-based gas sensitive material and a preparation method thereof. According to the present invention, a single crystal silicon wafer is treated through chemical etching and secondary chemical etching to generate a one-dimensional silicon nano-wire array on the surface of the single crystal silicon wafer and carry out two etching micro-structure modification treatment; and sequentially coating the single crystal silicon wafer treated in the previous step with an initiator solution and a pyrrole monomer solution to initiate in-situ pyrrole polymerization in the one-dimensional silicon nano-wire array to synthesize polypyrrole. According to the present invention, based on the method, the surface of the silicon nano-wires can be uniformly modified with the organic polypyrrole particles to obtain the organic matter-one-dimensional silicon-based nanometer composite gas sensitive material with significant composite modification effect, wherein the gas sensitive material can perform theinstantaneous detection on NH3 gas at a room temperature, and has good selectivity.

Description

technical field [0001] The invention belongs to the technical field of gas sensors, and more specifically relates to a room-temperature working gas-sensitive material and a method thereof for constructing a one-dimensional polypyrrole uniform surface-modified one-dimensional silicon base using an anisotropic secondary etching microstructure modification technology. Background technique [0002] In recent years, due to the wide application of gas sensors in environmental control and protection, the manufacture of modern industrial and agricultural products, anti-terrorism, and even in disease diagnosis, people have attracted more and more attention. One-dimensional semiconductor nanomaterials have attracted much attention due to the basic properties of low-dimensional materials and their potential research value in nanodevices. For example, metal oxide one-dimensional semiconductor nanomaterials are widely used in gas sensors. However, due to its incompatibility with semicon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/30G01N27/04C23C14/35C23C14/16
CPCC23C14/165C23C14/35G01N27/04G01N27/30
Inventor 秦玉香崔震姜芸青张天一
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com