Method of preparing Tl-1223 superconductive thin film

A tl-1223, superconducting thin film technology, applied in the usage of superconducting elements, superconducting devices, superconducting/high-conducting conductors, etc., can solve the problem of difficult preparation of Tl-1223 thin film, high consumption of thallium source accompanying burning target , Low experimental repeatability and other problems, to achieve the effect of shortening the heating and cooling time and constant temperature time, short preparation time and simple process

Active Publication Date: 2018-01-19
GUANGXI TEACHERS EDUCATION UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This sintering method has the disadvantages of high sintering temperature, long sintering time, large consumption of thallium source and burning target, high cost, low experimental repeatability, etc., and it is difficult to prepare pure phase Tl-1223 thin film

Method used

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  • Method of preparing Tl-1223 superconductive thin film
  • Method of preparing Tl-1223 superconductive thin film
  • Method of preparing Tl-1223 superconductive thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A kind of preparation method of Tl-1223 superconducting film, substrate is CeO 2 / sapphire, including:

[0036] Step 1. Preparation of thallium-containing amorphous precursor film by sol-gel method: starting materials of thallium, barium, calcium, copper acetate, propionic acid, lactic acid, diethylenetriamine, methanol, etc. Complexing agent and solvent prepare sol; With this sol has CeO 2 A gel film is prepared on the sapphire substrate of the isolation layer, and a precursor film is obtained through drying and thermal decomposition processes. The metal ion molar ratio of Tl, Ba, Ca, and Cu of the prepared precursor film is 1.2:2:2:3.2;

[0037] Step 2. Preparation of a thallium-containing burner target: BaO with a metal ion molar ratio of Ba:Ca:Cu=2:2:3 2 , CaO and CuO as starting materials are mixed and ground, kept at a constant temperature of 890-940°C for 4 hours in a flowing oxygen environment, crushed and then ground after cooling, kept at a constant temperat...

Embodiment 2

[0042] A kind of preparation method of Tl-1223 superconducting film, substrate is CeO 2 / sapphire, including:

[0043] Step 1. Preparation of thallium-containing amorphous precursor film by sol-gel method: starting materials of thallium, barium, calcium, copper acetate, propionic acid, lactic acid, diethylenetriamine, methanol, etc. Complexing agent and solvent prepare sol; With this sol has CeO 2 Prepare a gel film on the sapphire substrate of the isolation layer, and obtain a precursor film through drying and thermal decomposition processes. The metal ion molar ratio of Tl, Ba, Ca, and Cu of the prepared precursor film is 2.5:2:2:3.6;

[0044] Step 2. Preparation of a thallium-containing burner target: BaO with a metal ion molar ratio of Ba:Ca:Cu=2:2:3 2 , CaO and CuO as starting materials are mixed and ground, kept at a constant temperature of 890-940°C for 8 hours in a flowing oxygen environment, crushed and then ground after cooling, kept at a constant temperature of 89...

Embodiment 3

[0049] A kind of preparation method of Tl-1223 superconducting film, substrate is lanthanum aluminate, comprising:

[0050] Step 1. Preparation of an amorphous precursor film containing thallium: BaO with a metal ion molar ratio of Ba:Ca:Cu=2.5:2:3.4 2 or BaO, CaO or CaCO 3 Mix and grind with CuO as the starting material, keep the temperature at 890-940°C for 6h in the flowing oxygen environment, add Tl 2 o 3 Mix and grind the tablets so that the molar ratio of Tl and Ca is Tl:Ca=1.7:2, put them in a sealed crucible, put them together in a sealed quartz tube, keep the temperature at 890-940°C for 6 hours in a flowing oxygen environment, and cool Finally, the sputtering target is obtained; the sputtering target adopts radio frequency magnetron sputtering, and the sputtering gas is high-purity Ar or Ar / O 2 Mixed gas, the sputtering pressure is 2-7Pa, and the sputtering power is 45W; the metal ion molar ratio of Tl, Ba, Ca, and Cu in the prepared precursor film is 1.8:2:2:3.4;...

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Abstract

The invention discloses a method of preparing a Tl-1223 superconductive thin film. In the invention, a thallium-containing amorphous precursor film and a thallium-containing sintering accompanying target are sealed and coated with a silver foil or a gold foil, and then sintering is carried out in a sealed argon gas or a flowing oxygen environment. In the method, phase forming temperature zone of low-temperature phases, such as Tl-1212 and Tl-2212, can be crossed quickly and Tl-1223 superconductive phase temperature zone is directly reached, thus producing a pure-phase thin film. The method isshort in temperature increase / decrease time and constant temperature time and is low in production cost.

Description

technical field [0001] The invention relates to the field of thallium superconducting thin film materials. More specifically, the present invention relates to a preparation method of Tl-1223 superconducting thin film. Background technique [0002] TlB 2 Ca 2 Cu 3 o 9 The (Tl-1223) superconductor has a crystal structure of a single Tl-O layer, which has strong magnetic flux pinning. Its performance under a strong magnetic field is similar to that of YBCO materials, and it still maintains good transmission performance, and the transition temperature is high (125K ), is a material that can realize superconducting electricity transmission in the liquefied natural gas temperature range, and has great potential value in the application of weak and strong electricity. [0003] In the current research on the synthesis of Tl-1223 thin films, the main methods for preparing precursor films include MOCVD, screen-printing method, pulsed laser deposition, magnetron sputtering, ultras...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/45C04B35/622C04B35/64C04B37/00H01B12/00
CPCY02E40/60
Inventor 谢清连蒋艳玲唐平英刘丽芹黄佳陈名贤黄国华
Owner GUANGXI TEACHERS EDUCATION UNIV
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