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A purely inorganic photodetector based on the zno/cspbbr3/moo3 structure

An inorganic photoelectric and detector technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of limited development, poor stability, etc., and achieve the effect of clear overall structure, high stability, and simple operation steps

Active Publication Date: 2018-11-20
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the poor stability makes the organic-inorganic hybrid lead halide perovskite easy to decompose under the influence of water and oxygen molecules in the air, which limits its development in optoelectronic devices[1]

Method used

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  • A purely inorganic photodetector based on the zno/cspbbr3/moo3 structure
  • A purely inorganic photodetector based on the zno/cspbbr3/moo3 structure
  • A purely inorganic photodetector based on the zno/cspbbr3/moo3 structure

Examples

Experimental program
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Effect test

Embodiment 1

[0040] Example 1: 12nm thickness MoO3 Preparation of detectors:

[0041] (1) Ultrasonic the transparent conductive glass FTO with deionized water, acetone, and alcohol for 15 minutes respectively, and then treat it with ultraviolet ozone environment for 30 minutes.

[0042] (2) The ZnO seed layer is prepared by spin coating. Dissolve 1.5M zinc acetate solution in methanol solution and stir for 10 minutes, and spin-coat on FTO at a speed of 5000r / min for 20 seconds. Dry at 100°C for 10 minutes, and then transfer to a horse-boiling furnace for annealing for 2 hours.

[0043] (3) ZnO nanorods were prepared by water bath method. Add 0.6g polyetherimide (PEI) into 150ml deionized water and stir, then add 50mmol / L zinc nitrate hexahydrate (Zn(NO 3 ) 2 ·6H 2 O) and 30mmol / L hexamethylenetetramine (C 6 h 12 N 4 ), fully stirred for 30 minutes, put the annealed sample in step (2) into the solution, reacted for 10 minutes at 88.5 degrees, took it out of the solution, and dried t...

Embodiment 2

[0049] Example 2: MoO with different thicknesses 3 Preparation of the detector:

[0050] (1) Ultrasonic the transparent conductive glass FTO with deionized water, acetone, and alcohol for 15 minutes respectively, and then treat it with ultraviolet ozone environment for 30 minutes.

[0051] (2) The ZnO seed layer is prepared by spin coating. Dissolve 1.5M zinc acetate solution in methanol solution and stir for 10 minutes, and spin-coat on FTO at a speed of 5000r / min for 20 seconds. Dry at 100°C for 10 minutes, and then transfer to a horse-boiling furnace for annealing for 2 hours.

[0052] (3) ZnO nanorods were prepared by water bath method. Add 0.6g polyetherimide (PEI) into 150ml deionized water and stir, then add 50mmol / L zinc nitrate hexahydrate (Zn(NO 3 ) 2 ·6H 2 O) and 30mmol / L hexamethylenetetramine (C 6 h 12 N 4 ), fully stirred for 30 minutes, put the annealed sample in step (2) into the solution, reacted for 10 minutes at 88.5 degrees, took it out of the solu...

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Abstract

The invention provides a pure inorganic self-driven photodetector with an FTO / ZnO nanorod / CsPbBr3 / MoO3 / Au structure and a preparation method thereof. The specific structure thereof is a FTO substrate layer, the ZnO nanorod is an electron transport layer, CsPbBr3 perovskite is a light absorption layer, a semiconductor oxide MoO3 is a hole transport layer, and a metal electrode is composed of Au. Methods of spin coating, water bath, two-step synthesis, evaporation and the like are used for preparation. In the pure inorganic photodetector, the all inorganic heterojunction structure formed by ZnO nanorod / CsPbBr3 and the hole transport layer made of the semiconductor oxide MoO3 are used, so that the pure inorganic photodetector has high stability and low cost, and the responsivity and the detection degree are respectively 0. 45A / W and 1.76 * 1013cmHz1 / 2 / W. At the same time, the device has self-driving ability, does not need bias voltage in working and has low power consumption so as to save energy. The operation steps are simple, the experimental cost is cheap, and the application prospect is good.

Description

technical field [0001] The invention relates to the technical field of semiconductor nanomaterials and photodetectors, in particular to a ZnO / CsPbBr-based 3 / MoO 3 Structured self-driven photodetectors of highly stable pure inorganic perovskite materials. Background technique [0002] Organic-inorganic hybrid lead halide perovskite materials have attracted extensive attention in recent years because of their large absorption coefficients, long carrier lifetimes and diffusion lengths, they are widely used in solar cells, LEDs, photodetectors and lasers. There are many applications. However, poor stability makes organic-inorganic hybrid lead halide perovskites easy to decompose under the influence of water and oxygen molecules in the air, which limits their development in optoelectronic devices [1]. However, pure inorganic perovskite materials have been proved to have higher chemical stability and electrical properties[2-4]. Therefore, the performance research based on pure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/103H01L31/0264H01L31/18
CPCH01L31/0264H01L31/103H01L31/1876Y02P70/50
Inventor 王浩薛梦妮周海叶葱
Owner HUBEI UNIV
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