Preparation method of mica film and transistor

Abstract

The invention discloses a preparation method of a mica film. The method comprises that a substrate is placed in a vacuum pulse laser deposition device; and a mica target material is corroded by pulse laser so that the surface of the mica target material generates a plasma plume, and the plasma plume deposed on the substrate grows to form the uniform mica film. The invention also discloses a transistor which includes the mica film prepared by the preparation method. The mica film is introduced into the transistor and serves as a dielectric layer, and a layered 2D nano structure of mica is ultrathin, and is conducive to grid modulation of the transistor and high-density integration of the transistor in the vertical direction. In addition, the surface of the mica film is very smooth, carriers of the transistor can be avoided from influence of surface roughness and a trapping state, and the transistor can obtain a higher carrier mobility rate.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to a method for preparing a mica thin film and a transistor. Background technique [0002] As a typical representative of wide-bandgap semiconductor materials, gallium nitride (GaN)-based materials have the characteristics of large bandgap width, high electron saturation drift velocity, high breakdown field strength, and good thermal conductivity. They can be used to make high-temperature, high-frequency and high power electronics. More importantly, GaN-based materials can form modulation-doped AlGaN / GaN heterostructures, which can obtain high electron mobility, extremely high peak electron velocity and saturation electron velocity at room temperature, and obtain better than the first Higher two-dimensional electron gas density in second-generation compound semiconductor heterostructures. Therefore, high electron mobility transistors based on AlGaN / GaN heterojunction...

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Problems solved by technology

However, this method is complicated in process, and it only reduces the current collapse to a certain extent, and cannot completely prevent the influence of the surface state on the two-dimensional electron gas in the main channel. When the electric field is high, the two-dimensional electron gas will still be captured by the surface state, thus affecting the device. Stability and reliability of performance

[0004] In addition, due to the large reverse leakage of Schottky gate AlGaN / GaN heterojunction devices, it will lead to the deterioration of key performances such as breakdown voltage, efficiency, and gain of the device.

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