No-clean high-temperature electronic soldering flux and preparation method thereof
A no-cleaning, high-temperature technology, applied in the direction of manufacturing tools, welding equipment, metal processing equipment, etc., to achieve the effect of clean cleaning process, full solder joints, and no residue in solder joints
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Embodiment 1
[0025] A no-cleaning high-temperature electronic flux, comprising the following raw materials in parts by weight: 5 parts of bismuth chloride, 3 parts of tin fluorosilicate, 2 parts of tin methanesulfonate, 1 part of titanium dioxide, 1 part of glass fiber reinforced plastic powder, zirconium acetylacetonate 2.4 parts, 6 parts of 1-benzylhydantoin, 3 parts of polyethylene glycol oleate, 2 parts of organic bentonite, 4 parts of decyl glucoside, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate 3 parts of acid, 2 parts of triphenylphosphine ruthenium chloride, 18 parts of diethylene glycol monohexyl ether, 16 parts of dipropylene glycol monomethyl ether, 4 parts of tall oil rosin, 2 parts of N, N-dimethylacetamide 1 part, 1 part of disproportionated potassium abietate, 1 part of methyl monoethanolamine, 2 parts of lauroyl diethanolamine, 3 parts of 1-N-hydroxybenzotriazole, 2 parts of barium dinonylnaphthalenesulfonate.
[0026] The preparation method of the no-cleaning high...
Embodiment 2
[0034] A no-cleaning high-temperature electronic flux, comprising the following raw materials in parts by weight: 11 parts of bismuth chloride, 9 parts of tin fluorosilicate, 6 parts of tin methanesulfonate, 7 parts of titanium dioxide, 4 parts of glass fiber reinforced plastic powder, zirconium acetylacetonate 6 parts, 10 parts of 1-benzylhydantoin, 9 parts of polyethylene glycol oleate, 6 parts of organic bentonite, 9 parts of decyl glucoside, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate 7 parts of acid, 6 parts of triphenylphosphine ruthenium chloride, 28 parts of diethylene glycol monohexyl ether, 25 parts of dipropylene glycol monomethyl ether, 9 parts of tall oil rosin, 8 parts of N, N-dimethylacetamide 5 parts, 5 parts of disproportionated potassium abietate, 4 parts of methyl monoethanolamine, 5 parts of lauroyl diethanolamine, 8 parts of 1-N-hydroxybenzotriazole, 7 parts of barium dinonylnaphthalenesulfonate.
[0035] The preparation method of the no-cleaning...
Embodiment 3
[0043]A no-cleaning high-temperature electronic flux, comprising the following raw materials in parts by weight: 5.6 parts of bismuth chloride, 3.2 parts of tin fluorosilicate, 2.8 parts of tin methanesulfonate, 1.5 parts of titanium dioxide, 1.4 parts of glass fiber reinforced plastic powder, zirconium acetylacetonate 2.8 parts, 6.5 parts of 1-benzylhydantoin, 3.5 parts of polyethylene glycol oleate, 2.5 parts of organic bentonite, 4.2 parts of decyl glucoside, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate 3.5 parts of acid, 2.4 parts of triphenylphosphine ruthenium chloride, 20 parts of diethylene glycol monohexyl ether, 18 parts of dipropylene glycol monomethyl ether, 4.5 parts of tall oil rosin, 2.4 parts of N, N-dimethylacetamide 1.4 parts of disproportionated potassium abietate, 1.6 parts of methyl monoethanolamine, 2.7 parts of lauroyl diethanolamine, 3.6 parts of 1-N-hydroxybenzotriazole, and 2.6 parts of barium dinonylnaphthalenesulfonate.
[0044] The prepara...
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