A structure for improving the water-oxygen barrier performance of flexible substrates and its preparation method
A water-oxygen barrier, flexible substrate technology, used in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve problems affecting device life, deterioration, poor flexibility of ultra-thin glass, etc. Reliability, reducing temperature gradient and junction temperature, improving the effect of water and oxygen barrier effect
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Embodiment 1
[0020] Example 1 Graphene water-oxygen barrier layer and Ag compound to prepare OLED device with high light extraction efficiency
[0021] 1) Graphene CVD preparation: a copper foil (1cm*1cm) with a thickness of 25 microns and a purity of 99.8wt% was ultrasonically cleaned in acetone, isopropanol, and deionized water for 20 minutes in sequence. The cleaned copper foil is used as a polished anode, and the copper plate is used as a cathode for electrochemical polishing. Wherein, the proportion of the electrolyte is deionized water: phosphoric acid: ethanol: isopropanol: urea = 100ml: 50ml: 50ml: 10ml: 1g. The polished copper foil was then ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes, and dried with high-purity nitrogen. Put the copper foil in the CVD reaction chamber, evacuate until the pressure in the reaction chamber drops below 1Pa, pass in a hydrogen / argon gas mixture (hydrogen 10%) to normal pressure, repeat this step 3 times, and contro...
Embodiment 2
[0026] Example 2 Graphene water and oxygen barrier layer doubles as electrode to prepare transparent OLED device
[0027] 1) Graphene CVD preparation: place copper foil (6cm*10m) with a thickness of 25 microns and a purity of 99.8wt% in the roll-to-roll PECVD reaction chamber in sequence, and vacuumize until the pressure in the reaction chamber drops below 1Pa, and pass through Hydrogen / argon mixed gas (hydrogen 20%) to normal pressure, repeat this step 3 times, control the flow rate of the mixed gas to 100 sccm, raise the temperature to 900°C, adjust the power of the RF power supply to 300W to generate the plasma glow of the whole tube, and inject carbon Source precursor CH 4 , the flow rate is 200sccm, the pressure is 650Pa, the moving speed of the copper foil is set to 60cm / hour, the carbon source precursor is cut off after the growth is completed, the flow rate of the mixed gas is kept constant, and the temperature is lowered to room temperature.
[0028] 2) Graphene tran...
Embodiment 3
[0031] Embodiment 3 single graphene as flexible substrate water oxygen barrier layer
[0032] 1) Graphene CVD preparation: Nickel foil (3cm*3cm) with a thickness of 20 microns and a purity of 99.9wt% was ultrasonically cleaned in acetone, isopropanol, and deionized water for 10 minutes, and dried with nitrogen. Place in the CVD reaction chamber, evacuate until the pressure in the reaction chamber drops below 1Pa, feed hydrogen / argon mixed gas (hydrogen 10%) to normal pressure, repeat this step 3 times, control the flow rate of the mixed gas to 100 sccm, Raise the temperature to 1000°C and feed the carbon source precursor C 2 h 2 , the flow rate is 20 sccm, the temperature is kept at 650 Pa for 10 minutes, the carbon source precursor is cut off, the flow rate of the mixed gas is kept constant, and the temperature is rapidly cooled to room temperature.
[0033] 2) Graphene transfer: In step 1), the nickel / graphene obtained is transferred to a PI substrate covered with a 15-mic...
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