Passivating method for front side and side walls of discrete device chip

Abstract

The invention provides a passivating method for the front side and side walls of a discrete device chip. The method comprises: step 1), providing a chip wafer and cutting the chip wafer to form multiple cut channels; step 2), providing a screen printing plate which is provided with holes matched with the cut channel pattern of the chip wafer, wherein the screen printing plate and the chip wafer are aligned and fixed; and step 3), based on the screen printing plate, allowing a passivating material to go through the holes and then get attached to the side walls of the cut channels. According to the passivating method, with adoption of a solder resist ink spraying technology, in combination with screen printing plate pattern design for manufacturing, through UV curing, thermocuring and the like, the passivating protection of the front side and side walls of the discrete device chip, especially a SBD product is realized, short circuit caused by draining material during lead bonding of unpacked chip packaging of a chip can be prevented, side wall protection of an electronic chip can be realized well. Compared with a traditional discrete device manufacturing process, the method has the features of low price, stable process, excellent and reliable performance, short manufacturing period, flexible design and the like.

Description

technical field [0001] The invention relates to a passivation method for a chip, which belongs to the field of semiconductor manufacturing, in particular to a passivation method for the front and side walls of a discrete device chip. Background technique [0002] With the continuous development of semiconductor technology, power devices, as a new type of device, are widely used in fields such as disk drives and automotive electronics. Power devices need to be able to withstand large voltage, current and power loads. However, existing devices such as MOS transistors cannot meet the above requirements. Therefore, in order to meet the needs of applications, various power devices have become the focus of attention. [0003] Schottky barrier diodes (SBD) generally use Schottky metals (titanium, nickel, cobalt, chromium, platinum, etc.) properties of metal-semiconductor devices. Because there are a large number of electrons in the N-type semiconductor and only a small amount of...

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for passivating the front and side walls of a discrete device chip, which is used to solve the problem of high manufacturing cost and long manufacturing cycle of chip passivation in the prior art. question

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