Aluminum-gallium-nitride compound/gallium nitride high-electron mobility transistor
A high electron mobility, compound technology, applied in transistors, circuits, electrical components, etc., can solve the problems of 2DEG concentration reduction, redistribution, device performance consistency and adverse effects on reliability, etc. Effects of redistribution, improved consistency and reliability
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[0011] Below in conjunction with accompanying drawing, the present invention is further described in detail:
[0012] figure 2 Shown is an embodiment of the AlGaN / GaN HEMT according to the present invention. The AlGaN / GaN HEMT according to the present invention has a substrate 21, the substrate 21 is any one of sapphire, Si and SiC, preferably semi-insulating 4H- SiC and semi-insulating 6H-SiC are used as substrates, and semi-insulating 4H-SiC (0001) and semi-insulating 6H-SiC (0001) are used as substrates, which have high thermal conductivity and small lattice mismatch with GaN It is not only easy to grow high-quality GaN epitaxial materials, but also conducive to the heat dissipation of devices. Currently, Cree and II-VI companies in the United States sell SiC substrates in both 4H and 6H forms.
[0013] The GaN buffer layer 22 is located on the substrate 21, and the thickness of the GaN buffer layer is preferably 1500-2000nm. The GaN buffer layer 22 generally has a higher...
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