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Device for growing zinc oxide crystal

A technology of zinc oxide and crystals, applied in the field of devices for growing zinc oxide crystals, which can solve the problems of difficult growth process control and complex growth device structure, and achieve the effects of reducing production costs, easy control of the growth process, and high growth rate

Inactive Publication Date: 2012-10-03
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a device for growing zinc oxide crystals with simple structure and easy control of the growth process, so as to solve the problems of complex structure of the growth device and difficult control of the growth process in the prior art

Method used

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  • Device for growing zinc oxide crystal
  • Device for growing zinc oxide crystal
  • Device for growing zinc oxide crystal

Examples

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Embodiment 1

[0019] Example 1, see figure 1 , a device for growing zinc oxide crystals is a single crucible induction heating type, including a heater 15 and a growth chamber 4, the growth chamber 4 is arranged on a corundum support 17 in the vacuum chamber 25 and is heated by the heater 15, the growth chamber 4 Zinc oxide powder 7 is inside, and an insulation layer 1 is provided outside the growth chamber 4 . The water-cooled induction coil 5 is fixed on the coil support 6 and built in a vacuum chamber 25. The vacuum chamber 25 is made of double-layer stainless steel with water interlayer, and the bottom is provided with a cooling water input port 21, and the top is provided with a cooling water output port 24. 25 is provided with a protective gas inlet 22 and an air extraction port 20; the iridium crucible or zirconium diboride crucible doubles as a heater 15 and is covered with an upper top, a lower bottom insulation pad, an outer insulation barrel 8, an inner insulation barrel 10 and ...

Embodiment 2

[0020] Example 2, see figure 2 , a device for growing zinc oxide crystals is a double-crucible induction heating type, including a heater 15 and a growth chamber 4, the growth chamber 4 is arranged on a corundum support 17 in the vacuum chamber 25 and is heated by the heater 15, the growth chamber 4 Zinc oxide powder 7 is inside, and an insulation layer 1 is provided outside the growth chamber 4 . The upper heater 15 is an upper heater 12 . The water-cooled induction coil 5 is fixed on the coil support 6 and built in a vacuum chamber 25, the vacuum chamber 25 is made of double-layer stainless steel with water interlayer and is provided with a cooling water input port 21 and a cooling water output port 24 and a protection valve at its upper and lower parts respectively. The gas inlet 22 and the gas extraction port 20; the alumina crucible composed of the upper crucible 13, the lower crucible 14 and the crucible cover 2 is coaxially installed in the zirconium diboride heater 1...

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Abstract

The invention discloses a device for growing zinc oxide crystal. The device is characterized by comprising a heater and a growth chamber, wherein the growth chamber is arranged in a vacuum chamber and is heated through the heater; and a thermal insulation layer is arranged outside the growth chamber. The device is a device for growing the zinc oxide crystal through a sublimation method. The device has the characteristics of high heating speed, easiness for the growth chamber to achieve high vacuum and the like; and the control over ZnO crystal size and growth speed is realized by changing technological conditions. The potential safety hazard existing in high voltage equipment in the prior art is avoided, the growth rate is high, the growth process is easy to control, large-sized ZnO crystals can be grown, and the production cost is reduced.

Description

technical field [0001] The invention relates to a crystal growth device, in particular to a device for growing zinc oxide crystals. Background technique [0002] Zinc oxide (ZnO) is a direct bandgap semiconductor material with a wide bandgap. The bandgap of a single crystal at room temperature is 3.37eV, and the exciton-binding energy is as high as 60meV, which is much higher than that of GaN. The sub-binding energy (25mev) is very suitable as an excitation light source material for long-life white LEDs. Once the ZnO-based LED enters the stage of commercial application, the market demand for ZnO-based homoepitaxial substrates will be huge. Both ZnO and GaN have a hexagonal wurtzite crystal structure, the lattice constants are very close, and the lattice mismatch degree is small (~2.2%). Compared with GaN bulk single crystal, ZnO has more abundant resources and lower growth cost. Therefore, ZnO bulk single crystal is not only an important substrate material for the preparat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/06C30B23/00C30B29/16
Inventor 马剑平刘洋刘富丽吴盼儒
Owner XIAN UNIV OF TECH
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