A preparation method for improving the quality of gallium nitride crystal

Abstract

The invention belongs to the field of inorganic compound semiconductor materials, and more particularly relates to a preparation method for improving the quality of gallium nitride crystals. The preparation method comprises the following steps: firstly, dispersing metal gallium salt and a nucleation inducer in a polyvinyl alcohol water solution, adding a water-based adhesive and stirring at a high speed, such that the gallium salt and the nucleation inducer are coated in a gel network structure formed from polyvinyl alcohol; then carrying out high-pressure homogenization to form nano composite gel; uniformly coating the obtained composite gel onto an Si substrate subjected to surface treatment; putting the Si substrate in a tube furnace and drying in a nitrogen atmosphere, and then raising the temperature of the tube furnace to 850 to 1050 DEG C; introducing ammonia to react for 90 to 110min; stopping introducing the ammonia and cooling to room temperature in the nitrogen atmosphere to obtain faint yellow gallium nitride crystals having a regular crystal form. According to the preparation method, the gallium nitride crystals are prepared by coating the composite nano gel formed by the gallium salt and the nucleation inducer onto the Si substrate, such that the gallium nitride crystals are good in surface appearance, regular in crystal form, high in yield and high in purity and have a wide application value.

Description

technical field [0001] The invention belongs to the field of inorganic compound semiconductor materials, in particular to a preparation method for improving the quality of gallium nitride crystals. Background technique [0002] The third-generation semiconductor materials represented by gallium nitride are also called wide-bandgap semiconductors because their energy bandgap is generally greater than 3.0 eV. Compared with traditional silicon-based and gallium arsenide-based semiconductor materials, the third-generation semiconductor materials can meet the requirements of high power, high temperature, high frequency and high speed due to their unique band gap range, excellent optical and electrical properties and excellent material properties. The working requirements of semiconductor devices have very broad application prospects in the automotive and aerospace industries, medical, military and general lighting. [0003] GaN material is a direct transition wide bandgap semico...

AI Technical Summary

Problems solved by technology

This method has the advantages of low production technical requirements, convenient operation, high crystal growth rate, and short synthesis time. However, the purity of gallium nitride crystals prepared by this method is not high, and high-concentration acid needs to be used to remove residual LiBO. 2 , the follow-up processing work is more cumbersome, and the output of gallium nitride crystals needs to be improved

[0006] However, in the above-mentioned method, due to the low crystal growth rate, long period, and the irregular shape of the generated crystals, the quality of gallium nitride nanocrystals is affected, and it is not easy to popularize the large-scale industrial production of gallium nitride nanocrystals. Therefore, it is necessary to find a simple , fast and low-cost preparation of high-quality GaN nanocrystals has become the unremitting goal of researchers in the field of optoelectronic materials