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Treatment method of copper foil used for graphene film growth and copper foil prepared by adopting same

A graphene film and processing method technology, applied in cleaning methods and utensils, chemical instruments and methods, gaseous chemical plating and other directions, can solve the problems of uneven growth of graphene films, low cleanliness and activity, and achieve uniformity and stability Nucleation growth, defect reduction, yellowing avoidance effect

Active Publication Date: 2015-11-04
2D CARBON CHANGZHOU TECH INC
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a treatment method of copper foil for graphene film growth, which solves the technical problem of uneven growth of graphene film due to the low cleanliness and low activity of the copper foil surface for graphene film growth

Method used

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  • Treatment method of copper foil used for graphene film growth and copper foil prepared by adopting same
  • Treatment method of copper foil used for graphene film growth and copper foil prepared by adopting same
  • Treatment method of copper foil used for graphene film growth and copper foil prepared by adopting same

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Embodiment 1

[0028] The processing method of the copper foil used for the graphene thin film growth of the present embodiment, see figure 1 , the steps include: (1) plasma pretreatment, (2) electrochemical polishing, cleaning, (3) secondary plasma treatment; the specific steps include:

[0029] (1) Plasma pretreatment: The treatment process is carried out in two steps. First, the cut copper foil blank is placed in a vacuum plasma cleaning machine, and a certain flow of oxygen is passed through to perform the first plasma decontamination treatment. The active particles in the oxygen plasma can go deep into the micro holes and depressions, completely remove the dirt on the surface of the copper foil blank through chemical reaction, and effectively improve the cleanliness of the surface of the copper foil blank; the process control process conditions are: power 400W-500W , the pressure of the cleaning working cabin is below 40Pa, the oxygen flow rate is 150sccm-200sccm, and the processing tim...

Embodiment 2

[0042] On the basis of above-mentioned embodiment 1, the present invention also provides a kind of copper foil for graphene film growth, described graphene film growth copper foil is made by the processing method of described graphene film growth copper foil, The effect of growing graphene film on this copper foil, see figure 2 to Figure 6.

[0043] Specifically, the copper foils that have undergone different treatment processes are placed in the same diffusion furnace at the same time, and the growth process is controlled to perform CVD graphene film nucleation and growth. After the obtained copper foil samples are placed on a constant temperature heating plate at 150 ° C for 5 minutes, Observed with a metallographic microscope, the results are shown in Figure 6(a) to Figure 6(d), the white matter in the figure is the graphene film grains in the nucleation and growth. It can be seen from Figure 6(a) that the untreated copper foil has a large nucleation density of the graphe...

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Abstract

The invention relates to a treatment method of a copper foil used for graphene film growth and a copper foil prepared by adopting the same. The treatment method comprises the following steps: (1) carrying out plasma cleaning on a copper foil blank to remove dirt and then carrying out plasma oxide layer removal treatment on the copper foil blank to remove a surface oxide layer of the copper foil blank, wherein hydrogen is utilized as a plasma treatment gas; (2) carrying out electrochemical polishing on the copper foil blank from which the oxide layer is removed; (3) repeating the step (1) to remove the surface oxide layer of the polished copper foil blank, thus obtaining the copper foil used for graphene film growth. A two-step method is adopted in the plasma treatment process, oxygen is pumped in to eliminate organic stains in the first step, hydrogen or other reducing gases are pumped in to remove the oxide layer in the second step, the two processes belong to chemical reaction which is more efficient than physical reaction in which argon is pumped in and is more thorough in treatment, and yellowing of the copper foil can be effectively avoided to improve the integrity and uniformity of late graphene film generation.

Description

technical field [0001] The invention relates to a method for processing copper foil for graphene film growth and the copper foil prepared by the method. Background technique [0002] Graphene film, a single layer of carbon atoms with a graphite structure, has shocked the entire scientific community with its unique structure and excellent properties since it was first discovered in 2004. The rapid development of graphene films urgently requires large-scale batch preparation of high-quality graphene films with controllable structure thickness and size. At present, there are mainly the following methods for preparing graphene thin films: (1) micromechanical exfoliation method, (2) crystal epitaxial growth method, (3) chemical redox method, and (4) chemical vapor deposition (CVD) method. Among them, the CVD method is currently the most commonly used method for preparing large-area graphene thin films. The CVD method refers to the method in which the reaction substances undergo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/02C25F3/22B08B7/00
Inventor 金虎邓科文刘志成彭鹏张志华张文国杨海涛张旭磊齐轩
Owner 2D CARBON CHANGZHOU TECH INC
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