Substrate corrosive liquid for preparing Si-based mercury cadmium telluride chip dislocation observation sample
A technology of mercury cadmium telluride and etching solution, which is applied in the field of Si substrate corrosion when preparing samples for dislocation observation of Si-based mercury cadmium telluride chips, and can solve the problem of poor selectivity of cadmium telluride in the buffer layer, incompatibility of the low temperature operation process of mercury cadmium telluride, etc. problems, to achieve the effect of ensuring accuracy, small damage, and good selectivity
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Embodiment 1
[0008] Example 1: First, the tetramethylammonium hydroxide solution with a mass fraction of 25% and deionized water are configured into a mixed solution with a mass fraction of 5% according to a mass ratio of 1:4, and then 1g / l is added according to the volume of the mixed solution ammonium persulfate, and finally the mixed solution was heated to 80°C and set aside after 1 hour. The Si-based mercury cadmium telluride chip whose substrate was thinned and polished to 50 μm was etched in an etching solution at 60° C. for 2 hours, and then the substrate was completely removed.
Embodiment 2
[0009] Example 2: First, the tetramethylammonium hydroxide solution with a mass fraction of 25% and deionized water are configured into a mixed solution with a mass fraction of 10% according to a mass ratio of 2:3, and then 2 g / l is added according to the volume of the mixed solution ammonium persulfate, and finally the mixed solution was heated to 80°C and set aside after 1 hour. The Si-based mercury cadmium telluride chip whose substrate was thinned and polished to 50 μm was etched in an etching solution at 65° C. for 2.5 hours, and then the substrate was completely removed.
Embodiment 3
[0010] Example 3: First, the tetramethylammonium hydroxide solution with a mass fraction of 25% and deionized water are configured into a mixed solution with a mass fraction of 20% according to a mass ratio of 4:1, and then 3g / l is added according to the volume of the mixed solution ammonium persulfate, and finally the mixed solution was heated to 80°C and set aside after 1 hour. The Si-based mercury cadmium telluride chip whose substrate was thinned and polished to 50 μm was etched in an etching solution at 65° C. for 4 hours, and then the substrate was completely removed.
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