Nano dielectric layer preparation method based on thermal oxidation process

A technology of dielectric layer and thermal oxidation, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve problems such as unfavorable devices, interface defects, and complex operation of dielectric layers, so as to reduce defects and components uniform effect

Active Publication Date: 2015-09-09
BEIJING INST OF SPACECRAFT SYST ENG
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If such a method is selected, additional target material needs to be prepared during the preparation of the dielectric layer, which makes the preparation of the dielectric layer complicated, and theoretically there are interface defects between the metal and the dielectric layer, which will affect the rectification function in severe cases
[0004] Based on the above, the current MIM-TD di...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nano dielectric layer preparation method based on thermal oxidation process
  • Nano dielectric layer preparation method based on thermal oxidation process
  • Nano dielectric layer preparation method based on thermal oxidation process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The present invention will be further described below in conjunction with accompanying drawing and example.

[0026] 1) Substrate cleaning

[0027] 11) The wafer used for the substrate is a silicon wafer with a 2 μm silicon dioxide layer. The specific cleaning steps are as follows: using an ultrasonic machine, soak the silicon wafer in acetone and sonicate at 40% power for 15 minutes, soak the silicon wafer in isopropanol and sonicate at 40% power for 15 minutes, wash it with deionized water, and dry it;

[0028] 12) Soak the silicon wafer in a mixture of concentrated sulfuric acid and hydrogen peroxide (5:1), heat it at 70°C for 15 minutes, and wash it with deionized water;

[0029] 13) Soak the silicon wafer in a mixture of water, hydrogen peroxide and ammonia (7:2:1), and heat at 70°C for 15 minutes;

[0030] 14) Soak the silicon wafer in a mixture of water, hydrogen peroxide and concentrated hydrochloric acid (7:2:1), heat at 70°C for 15min, wash with deionized wa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A nano dielectric layer preparation method based on a thermal oxidation process of the invention belongs to the technical field of microelectronics, solid-state electronics and nano science. A square mask window is opened on a base metal layer by electron beam lithography. The base metal layer exposed at the mask window is oxidized by a thermal oxidation method. The specific process conditions are as follows: a silicon wafer is put in a drying oven and heated at 150-200 DEG C for 15-60min, the silicon wafer is immersed in butanone reagent for heating and ultrasonic processing, and mask stripping is completed. Characterization results show that the nano dielectric layer preparation method based on a thermal oxidation process can be used to prepare a dielectric layer film with certain oxidation ratio and certain thickness successfully. A dielectric layer is generated on the surface of the base metal layer in one step through in-situ oxidation. The preparation process is simple. No material needs to be added. The interface is highly coherent and has fewer defects. The method is expected to be widely used in scientific research and production.

Description

technical field [0001] The invention relates to a method for preparing a nano medium layer based on a thermal oxidation process, and belongs to the fields of microelectronics, solid electronics and nano science and technology. Background technique [0002] Tunneling diode (TD) is a new type of high-speed nano-device composed of quantum effect, which has high-frequency rectification characteristics. Commonly used tunneling diodes include resonant tunneling diode (RTD) and material-insulator-material tunneling diode (MIM-TD). Among them, MIM-TD has a simple structure and has attracted extensive attention. The intermediate insulating layer of MIM-TD is very thin. Under the action of tunneling effect, electrons can easily move from one layer of conductive material to another layer of conductive material. The tunneling time is as short as femtoseconds, which makes MIM-TD TD becomes the best choice for high frequency rectification. [0003] Generally, vacuum deposition methods, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L21/02186H01L21/02244
Inventor 贺涛芦姗胡海峰韩运忠周傲松张涛王颖高文军徐明明
Owner BEIJING INST OF SPACECRAFT SYST ENG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap