Gallium arsenide laser with low electronic leakage and manufacturing method thereof

Abstract

The invention discloses a gallium arsenide laser with low electronic leakage and a manufacturing method thereof. The electronic energy is lowered through leading a thick narrow-band gap insert layer into the part between an n type wave guide layer and an active region. The lowering of the electronic energy does not only improve the carrier capturing efficiency of a quantum well but also improves the temperature characteristics of the quantum well, and accordingly the electronic leakage is reduced. The gallium arsenide laser with the low electronic leakage uses quaternary material as the insert layer, through selecting proper material components, the band gap width of the insert layer is lowered, and moreover, the refractive index of the insert layer can be consistent with the refractive index of the n type wave guide layer, and the influence of the insert layer to the light field distribution is avoided. Through leading the thick narrow-band gap insert layer into the part between the n type wave guide layer and the active region, the threshold current, electro-optical conversion efficiency and the like performances of a GaAs-base laser are greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a gallium arsenide laser with low electron leakage and a manufacturing method thereof. Background technique [0002] With the rapid development of semiconductor optoelectronic devices, high-power semiconductor lasers came into being. Due to the advantages of small size, low price, high electro-optical conversion efficiency and long life of semiconductor lasers, semiconductor lasers have a very wide range of applications in the field of optoelectronics. Semiconductor lasers play an important role in the fields of industrial processing, medical treatment, military and theoretical research. Gallium arsenide is the most well-studied material so far compared to other semiconductor III-V materials. Therefore, people have the highest performance requirements for gallium arsenide lasers. This is reflected in the fact that gallium arsenide lasers can have ve...

AI Technical Summary

Problems solved by technology

If the temperature of the active region is too high, the electrons in the well will escape again, causing electron leakage

In addition, if the temperature of the active region is too high, the Auger recombination will be more serious, and the Auger recombination will generate hot carriers and cause electron leakage.

Second, the quantum well trapping efficiency is reduced

Eventually, the capture efficiency of the quantum well will decrease, which will also make more electrons not captured by the quantum well and directly cross the quantum well to the p-region, resulting in electron leakage

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