InAlN/AlGaN enhanced-type high-electron mobility transistor and manufacturing method thereof

Abstract

The invention discloses an InAlN / AlGaN enhanced-type high-electron mobility transistor and a manufacturing method thereof, so as to solve the problems that the prior enhanced-type device is complicated in manufacturing technology, the control difficulty is large, and the threshold voltage of the transistor is low. The device comprises, from bottom to top, a substrate, an AlN nucleation layer, a channel layer and an AlN interface insertion layer; the insertion layer is provided with a barrier layer and a source and drain region ohmic contact; the barrier layer is provided with an insulated gate dielectric layer; a gate electrode is arranged on the insulated gate dielectric layer; the source and drain region ohmic contact is provided with a source electrode and a drain electrode; the barrier layer adopts In0.17Al0.83N material; the channel layer adopts AlxGa<1-x>N material, and the x component in Al occupies 5% to 20%; and the insulated gate dielectric layer is Al2O3 formed by barrier layer oxidation. The device of the invention can be applied to an electronic device in fields such as a digital circuit and a high-voltage power switch, and has the advantages of high threshold voltage, simple manufacturing technology, and high repeatability.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, relates to a semiconductor device, in particular to a 0.17 Al 0.83 N as a barrier layer, Al x Ga 1-x N is used as a two-dimensional electron gas channel layer, and the In 0.17 Al 0.83 Al 2 o 3 Insulated gate dielectric, and metal-organic chemical vapor deposition technology is used to re-grow n-type heavily doped GaN in the source-drain ohmic contact region to form an enhanced high electron mobility transistor structure and implementation method for ohmic contact, mainly used for making high-voltage High-performance electronic devices in the field of power switches and digital circuits. Background technique [0002] AlGaN / GaN-based high electron mobility transistor HEMT has superior transport characteristics due to its large band gap, high critical breakdown field strength, high electron saturation drift velocity, and strong spontaneous and piezoelectric polarization effects. The...

AI Technical Summary

Problems solved by technology

However, it is difficult to control the process precision of the insulating gate dielectric grown by the conventional atomic layer deposition method, and the surface density of the grown material is poor, and because the method has the characteristic of conformality, the surface flatness of the underlying material is highly required

[0008] To sum up, the current existing technology cannot effectively realize the modulation of 2DEG area density, reduce the ohmic contact resistance of the source and drain regions and the reverse leakage current of the gate.

In addition, the device preparation process steps are complicated, the process precision control is difficult, and the equipment is expensive, which cannot meet the requirements of market-oriented commodity production.

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