Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultrathin single crystal germanium wafer processing method

A processing method and technology of single crystal germanium, applied in metal processing equipment, chemical instruments and methods, manufacturing tools, etc., can solve the problems of difficult parallelism control, uneven thickness, easy deformation, etc., and achieve low operation difficulty and uniform thickness. , Easy to clean effect

Active Publication Date: 2014-06-18
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of fragility, easy deformation, uneven thickness, difficult control of parallelism and only small-area ultra-thin single crystal germanium wafers in the processing of ultra-thin single crystal germanium wafers, and to provide a method that can To achieve the purpose of rapid and uniform thinning of germanium wafers, and at the same time obtain ultra-thin single crystal germanium wafers with good flatness and small surface damage.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A kind of processing method of ultra-thin single crystal germanium sheet, it comprises the following steps:

[0025] First, a single crystal germanium sheet with a thickness of 0.5 mm is cut from a single crystal germanium rod by wire cutting equipment;

[0026] Secondly, clamp the single crystal germanium wafer to the low temperature polishing machine;

[0027] Third, W14 (that is, the diamond particle size is between 10 and 14 μm, diamond can also be replaced by corundum, silicon carbide, boron carbide, the same below) diamond frozen solidified abrasive polishing disc, its preparation method and ingredients can use the patent number To implement the method and formula of 201010502782 (the same below), the polishing temperature is controlled at -25°C, and the polishing pressure is controlled at 800g / cm 2 , the polishing liquid is ethanol, the flow rate is 300ml / min, the polishing speed is 200r / min, and the germanium sheet is removed to 0.2-0.3mm.

[0028] Finally,...

Embodiment 2

[0030] A kind of processing method of ultra-thin single crystal germanium slice it comprises the following steps:

[0031] First, use wire-cutting equipment to cut single-crystal germanium rods from single-crystal germanium rods to obtain single-crystal germanium sheets with a thickness not exceeding 0.4 mm;

[0032] Secondly, clamp the single crystal germanium wafer to the low temperature polishing machine;

[0033] Third, the grinding uses W14 corundum frozen solidified abrasive polishing disc, the polishing temperature is controlled at -20°C, and the polishing pressure is controlled at 100g / cm 2 , the polishing liquid is acetone, the flow rate is 250ml / min, the polishing speed is 10r / min, and the germanium sheet is removed to 0.2-0.3mm;

[0034] Fourth, the polishing uses CeO with a median particle size of 2 μm 2 Frozen solidified abrasive polishing disc, the polishing temperature is controlled at -30°C, and the polishing pressure is controlled at 100g / cm 2 , the poli...

Embodiment 3

[0036] A kind of processing method of ultra-thin single crystal germanium sheet, it comprises the following steps:

[0037] First, use wire cutting equipment to cut single crystal germanium rods from single crystal germanium rods to obtain single crystal germanium wafers with a thickness not exceeding 0.35 mm;

[0038] Secondly, the single crystal germanium wafer is clamped on the low temperature polishing machine;

[0039] Third, W20 (that is, silicon carbide particle size between 14-20 μm, the same below) silicon carbide frozen solidified abrasive polishing disc is used for grinding. The polishing temperature is controlled at -30 ° C and the polishing pressure is controlled at 1000 g / cm 2 , the polishing solution is isopropanol, the flow rate is 500ml / min, the polishing speed is 350r / min, and the germanium sheet is removed to 0.2-0.25mm;

[0040] Finally, the polishing uses CeO with a median particle size of 0.15 μm 2 Frozen solidified abrasive polishing disc, the polis...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Mohs hardnessaaaaaaaaaa
Mohs hardnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an ultrathin single crystal germanium wafer processing method. The ultrathin single crystal germanium wafer processing method is characterized by comprising the following steps: first, using wire-electrode cutting equipment to cut a single crystal germanium rod to obtain single crystal germanium wafers with the thickness being less than 0.5mm; second, clamping the single crystal germanium wafers on a low-temperature polishing machine; third, firstly using a hard abrasive material with the Mohs hardness being greater than 9, such as diamond, corundum, silicon carbide, boron carbide with the granularity of 10-28[mu]m to froze and solidify an abrasive material polishing disk to serve as a polishing head for rough machining, and taking an anhydrous organic solvent as polishing liquid; using an abrasive material with the Mohs hardness being smaller than 9, such as CeO2 and silica with the granularity of 0.06-2[mu]m to froze and solidify the abrasive material polishing disk to serve as a polishing head for fine machining, and carrying out secondary processing, wherein the polishing temperature is controlled to be within minus 30DEG C to minus 10DEG C, the polishing pressure is controlled to be within 100-500g / cm<2>, the polishing solution is the anhydrous organic solvent, the flow rate is 50-500ml / min, the polishing rotation speed is 10-300r / min, and finally the ultrathin germanium wafers with the thickness being less than 0.15mm are obtained. The ultrathin single crystal germanium wafer processing method is simple and the yield is high.

Description

technical field [0001] The invention relates to a precision processing technology, especially a processing technology for ultra-thin single-crystal germanium slices, specifically a processing method for obtaining ultra-thin germanium slices by using frozen solidified abrasives to polish single-crystal germanium slices . Background technique [0002] At present, as the substrate material of compound solar cells, ultra-thin single-crystal germanium wafers need to be epitaxially grown by MOCVD on them. Therefore, there are not only very strict requirements on the surface quality, but also the thickness should be less than 0.2mm. Germanium is the most important semiconductor material after silicon. In addition to the semiconductor industry, germanium is widely used in aerospace industry, high-frequency ultra-high-frequency electronics, optical fiber communication, infrared optics, electronic devices, solar cells, chemical catalysts, biomedicine and other fields, and is a ve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/02B24B37/04B24B37/14C09G1/18
CPCB24B37/005B24B37/10
Inventor 赵研左敦稳孙玉利夏保红邵雳
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com