ESD protection component of LDMOS structure and with high maintaining voltage
A technology of ESD protection and high maintenance voltage, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of weak ESD robustness and insufficient anti-latch-up ability, so as to improve the secondary failure current, suppress the Kirk effect, The effect of improving high pressure resistance
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[0025] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:
[0026] An example of the present invention designs an ESD protection device with an LDMOS structure of high sustaining voltage, which not only makes full use of the high-voltage resistance characteristics of the LDMOS device, but also utilizes the characteristics of the low on-resistance and large current discharge capability of the SCR device. Utilizing the special layout structure design of P sinking doping, and forming a PN junction structure with the second N+ implantation region, the maintenance voltage of the device can be increased, and the device can meet the needs of power integrated circuit products with different requirements by adjusting the key layout size. High voltage ESD protection, no latch-up effect.
[0027] Such as figure 1 The cross-sectional view of the internal structure of the device shown in the example of the pre...
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