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Preparation method of micro-bridge structured infrared detector, and micro-bridge structure

A technology of infrared detector and micro-bridge structure, which is applied in the direction of micro-structure technology, micro-structure device, manufacturing micro-structure device, etc., can solve the problems affecting the sensitivity and response rate of the detector, the increase of production cost, and the poor heat insulation of bridge pier, etc., to achieve Improve structural strength and mechanical properties and reliability, reduce process costs, and enhance the effect of supporting thickness

Active Publication Date: 2013-03-06
WUXI INFISENSE PERCEPTION TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method uses Cu and W metal pillars, and the thermal insulation of the pier is poor, which affects the sensitivity and response rate of the detector, and introduces a CMP planarization process, which greatly increases the production cost

Method used

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  • Preparation method of micro-bridge structured infrared detector, and micro-bridge structure
  • Preparation method of micro-bridge structured infrared detector, and micro-bridge structure
  • Preparation method of micro-bridge structured infrared detector, and micro-bridge structure

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Embodiment Construction

[0044] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0045] The invention provides a method for preparing an infrared detector with a microbridge structure, see Figure 1 to Figure 7 , its specific process steps are as follows:

[0046] like figure 1 As shown, firstly, a metal reflective layer 102 is fabricated on a wafer of a readout circuit substrate 100 of a processed Si substrate. The metal material of the reflective layer 102 is Al or Ti, and the metal thin film is grown by magnetron sputtering (PVD) or electron beam evaporation, and then a reflective layer (Mirror) pattern is formed on the metal thin film by photolithography and etching. The metal of the reflective layer 102 has a reflectivity of more than 90% for infrared light of a specific wavelength (such ...

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Abstract

The invention relates to a preparation method of a micro-bridge structured infrared detector, and a micro-bridge structure. The method comprises the steps that: a metal reflective layer and a sacrificial layer are sequentially deposited on an infrared detector readout circuit substrate; PI holes are etched on the sacrificial layer, wherein the PI holes are positioned at an out-leading electrode of the readout circuit; a deposition support layer, a thermo-sensitive layer and a protective layer are sequentially deposited on the sacrificial layer; through holes are prepared in the PI holes, and a contact hole is prepared on the protective layer; electrode layer metal is deposited on the protective layer, and U-shaped metals with bridge pier structures are filled in the PI holes and the through holes; and U-shaped metal structures are formed through photolithography and etching; photolithography and etching is carried out upon the electrode layer metal; a passivation layer is deposited on the surface of the device, and the passivation layer is subjected to photolithography and etching, such that a passivation layer pattern is formed; and sacrificial layer releasing is carried out, such that the micro-bridge structure is formed. According to the invention, a U-shape filling method is adopted, and Al is adopted as a filling material. Therefore, sputtering and depositing are easy, and etching is convenient. The heat insulation property of the detector is better than that of a copper filling process, and a CMP step is not needed.

Description

technical field [0001] The invention belongs to the field of micro-electro-mechanical systems (MEMS, Micro-Electro-Mechanical Systems) manufacturing in semiconductor technology, and specifically relates to a manufacturing method of an uncooled infrared focal plane array detector, in particular to a pier structure of a micro-bridge. A new preparation method and microbridge structure. Background technique [0002] Uncooled infrared detection technology is a technology that senses the infrared radiation (IR) of external objects without a cooling system and converts it into an electrical signal that is processed and output on the display terminal. It can be widely used in many fields such as national defense, aerospace, medicine, production monitoring, etc. . Uncooled infrared focal plane detectors are able to work at room temperature, and have the advantages of light weight, small size, long life, low cost, low power, fast startup and good stability, etc., which meet the needs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B3/00G01J5/20
Inventor 邹渊渊甘先锋杨水长孙瑞山张连鹏
Owner WUXI INFISENSE PERCEPTION TECH CO LTD
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