Double-strain plane BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor Transistor) integrated device and preparation method

Abstract

The invention discloses a double-strain plane BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor Transistor) integrated device and a preparation method. The preparation method comprises the steps of: preparing a buried layer on a substrate piece; preparing a normal Si bipolar transistor in a bipolar device area; etching a deep slot in an active area of the integrated device, and epitaxially growing a P type Si layer, an SiGe gradient layer, an SiGe layer, a strain Si layer as an active area of an NMOS (N-channel metal oxide semiconductor) device and an N type Si layer, a strain SiGe layer, and an Si cap layer as an active area of a PMOS (P-channel metal oxide semiconductor) device; preparing a virtual grid and carrying out light dope source drain injection on the device, depositing SiO2 and self-aligning to form a source drain of the device, depositing an SiON grid dielectric layer and a W-TiN composite grid, and finally forming the double-strain plane BiCMOS integrated device. The method effectively improves the performance of the BiCMOS integrated device and the circuit by using tensile strain Si with high electronic mobility and compressive strain SiGe with high hole mobility as conductive channels of the integrated device respectively.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a double strain plane BiCMOS integrated device and a preparation method. Background technique [0002] The integrated circuit, which appeared in 1958, is one of the most influential inventions of the 20th century. Microelectronics, which was born based on this invention, has become the basis of existing modern technology and is accelerating the process of knowledge and informationization of human society. At the same time It has also changed the way of thinking of human beings. It not only provides human beings with a powerful tool to transform nature, but also opens up a broad space for development. [0003] Semiconductor integrated circuits have become the basis of the electronics industry, and people's huge demand for the electronics industry has prompted the rapid development of this field. In the past few decades, the rapid development ...

AI Technical Summary

Problems solved by technology

[0008] Due to the low mobility of Si material carrier materials, the performance of integrated circuits manufactured using Si BiCMOS technology, especially the frequency performance, is greatly limited; for SiGe BiCMOS technology, although SiGe HBT is used for bipolar transistors, However, Si CMOS is still used for unipolar devices that restrict the improvement of the frequency characteristics of BiCMOS integrated circuits, so these limit the further improvement of the performance of BiCMOS integrated circuits

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