IGBT (Insulated Gate Bipolar Transistor) power module specific to electromobile
A technology for power modules and electric vehicles, applied in circuits, electrical components, electric solid devices, etc., can solve the problems of low power density, weak vibration resistance, and poor reliability of IGBT modules, and achieve high power density, high reliability, Effect of High Heat Dissipation Efficiency
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[0010] The present invention will be further described below in conjunction with the drawings and specific embodiments.
[0011] As shown in the figure, the present invention includes an IGBT chip 1, a diode chip 2, an insulating ceramic substrate 3, a power terminal 5, a signal terminal 6, a plastic case 7 and a liquid cooling heat sink 4. The metal layers on both sides of the insulating ceramic substrate 3 are copper material layers or aluminum material layers, and nickel material is plated on the surface of the metal layer. The IGBT chip 1 and the diode chip 2 are soldered on the insulating ceramic substrate 3 using silver sintering technology. The silver has a melting point of 961 degrees, which greatly improves the fatigue resistance of soldering. The power terminal 5 and the signal terminal 6 are ultrasonically welded on the metal layer of the insulating ceramic substrate 3.
[0012] The insulating ceramic substrate 3 is soldered to the liquid-cooled radiator 4 by soldering....
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