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Pulling method for growing Ca12Al14O33 monocrystal in non-stoichiometric ratio melt

A ca12al14o33, non-stoichiometric technology, applied in the growth field of Ca12Al14O33 single crystal, can solve the problems of decreased light transmittance of C12A7 single crystal, serious corrosion of iridium crucible, lattice distortion, etc., to shorten the annealing period and increase light transmission. , the effect of reducing lattice distortion

Inactive Publication Date: 2012-03-21
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention will solve existing growth Ca 12 Al 14 o 33 Single crystal exists During the growth process of C12A7 single crystal, the corrosion of the iridium crucible is relatively serious, and during the growth process, a large number of iridium ions enter the lattice structure of C12A7 single crystal, resulting in a significant increase in the light transmittance of C12A7 single crystal. The decline of the crystal lattice, distortion and cracking of the crystal lattice, and the large limitation on the size of the C12A7 single crystal, etc., provide the pulling method to grow Ca in the non-stoichiometric melt. 12 Al 14 o 33 single crystal method

Method used

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  • Pulling method for growing Ca12Al14O33 monocrystal in non-stoichiometric ratio melt
  • Pulling method for growing Ca12Al14O33 monocrystal in non-stoichiometric ratio melt
  • Pulling method for growing Ca12Al14O33 monocrystal in non-stoichiometric ratio melt

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specific Embodiment approach 1

[0012] Specific embodiment 1: In this embodiment, Ca grows in the non-stoichiometric melt 12 Al 14 o 33 The single crystal method is carried out as follows:

[0013] 1. Weigh CaO and Al respectively 2 o 3 After mixing, where CaO and Al 2 o 3 The molar ratio of CaO is 12.1:7, the mass purity of CaO is greater than 99.99%, and the Al 2 o 3 The mass purity is greater than 99.99%;

[0014] 2. Then grind evenly, put it into a tablet press and press it into a disc, put the disc into a corundum crucible, heat up to 1250-1300°C in a muffle furnace, and keep the temperature at a constant temperature for 10-15 hours (solid-phase reaction at a constant temperature ), cooled to room temperature;

[0015] 3. Repeat step 2 for 2 to 3 times;

[0016] 4. Then put it in an iridium crucible, then put it into the pulling furnace, then evacuate the pulling furnace, and then fill it with a mixed gas of oxygen and nitrogen. The oxygen accounts for 4% to 5% of the volume of the mixed gas a...

specific Embodiment approach 2

[0018] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the lifting speed in step 4 is 0.5 mm / hour. Other steps and parameters are the same as in the first embodiment.

specific Embodiment approach 3

[0019] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the crystal rotation in Step 4 is 6 revolutions per minute. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

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Abstract

The invention relates to a pulling method for growing a Ca12Al14O33 monocrystal in a non-stoichiometric ratio melt and relates to a method for growing the Ca12Al14O33 monocrystal. The invention aims to solve the technical problems that an iridium crucible is corroded severely, light transmissivity is greatly reduced, crystal lattices are distorted and cracked, size limitation is high and the like in the conventional method for growing the Ca12Al14O33 monocrystal. The method comprises the following steps of: 1, weighing CaO and Al2O3 respectively; 2, mixing and grinding uniformly, tabletting, putting into a corundum crucible, keeping constant temperature and cooling to room temperature; 3, repeating the step 2 for 2 to 3 times; and 4, growing the crystal by using the pulling method to obtain the Ca12Al14O33 monocrystal. Due to the unique structure of a C12A7 material in the optical aspect, the C12A7 doped material can be applied to a semiconductor laser material in the aspects of blue light emission and white light tuning.

Description

technical field [0001] The present invention relates to Ca 12 Al 14 o 33 single crystal growth method. Background technique [0002] Dodecacalcium heptaaluminate (12CaO 7Al 2 o 3 , Ca 12 Al 14 o 33 , C12A7) is a wide-bandgap semiconductor oxide material, which has attracted close attention from domestic and foreign scholars in recent years because of its unique cage-like microstructure and extensive functionality. C12A7 has good thermal stability (melting point 1415°C), and the band gap is 5.9eV. Each unit cell of C12A7 crystal contains 12 cages, and the inner diameter of each cage is 0.4nm. The chemical formula of the unit cell can be expressed as [Ca 24 Al 28 o 64 ] 4+ +2O 2- , each cage has an average charge of 1 / 3 (+4 charges / 12 cages), which has a strong ability to capture electrons, thus showing different functionalities. C12A7 is electrically neutral as a whole, and the free O bound in the cage 2- Ion and Ca on the skeleton 2+ Ionic coordination, O 2-...

Claims

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Application Information

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IPC IPC(8): C30B15/20C30B29/22
Inventor 王锐孙金超仇兆忠
Owner HARBIN INST OF TECH
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