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Method for preparing high-density zinc oxide nano granules

A zinc oxide nanometer, high-density technology, applied in chemical instruments and methods, zinc oxide/zinc hydroxide, nanotechnology, etc., can solve the problems of no public reports, etc., to achieve precise size control, uniform particle shape and distribution, The effect of good compatibility

Inactive Publication Date: 2011-08-17
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are many international reports on atomic layer deposition ZnO thin films, but there is no public report on the preparation of ZnO nanoparticles by atomic layer deposition technology.

Method used

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  • Method for preparing high-density zinc oxide nano granules
  • Method for preparing high-density zinc oxide nano granules
  • Method for preparing high-density zinc oxide nano granules

Examples

Experimental program
Comparison scheme
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Embodiment

[0034] When working, the saturated vapor of diethyl zinc and nitrogen (N 2) are mixed and diluted in the dilution bottle 21, and the diluted mixed gas and the saturated vapor of hydrogen peroxide enter the reaction chamber 10 alternately in the form of gas pulses. The air pressure in the reaction chamber 10 is maintained at about 220 Pa before the gas pulse comes, and the heating coil 12 keeps the temperature of the reaction chamber 10 and the substrate 11 at 300°C. The substrate 11 for depositing ZnO nanoparticles is a silicon wafer cleaned by standard RCA, and the flow rate of nitrogen gas used to dilute diethyl zinc is 400 sccm.

[0035] In an atomic layer deposition cycle, the pulse and cleaning time of diethyl zinc and hydrogen peroxide are as follows figure 2 Shown: Step 1, feed nitrogen into the reaction chamber, and then feed saturated vapor of diethyl zinc during the duration of the nitrogen pulse. The pulse time of diethyl zinc is 0.5 s, which is used to dilute the...

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Abstract

The invention relates to a method for preparing high-density zinc oxide nano granules. In the method, the high-density zinc oxide nano granules are grown by using diethyl zinc steam diluted by inert gas and steam of aqueous solution of hydrogen peroxide as reaction precursors, adopting an atomic layer deposition mode and using atomic layer deposition equipment, wherein the diethyl zinc steam and the steam of the aqueous solution of the hydrogen peroxide, serving as the reaction precursors, are alternately introduced into a reaction cavity in a pulse mode, and the two kinds of steam are blown and washed by using inert gas. The high-density zinc oxide nano granules are grown by using an atomic layer deposition technology, so the process is simple, and the production cost is low; the size of the nano granules can be accurately controlled; the zinc oxide nano granules with average diameter of about 5 to 25 nanometers, height of 2 to 10 nanometers and density of 1.0*10<10> to 1.0*10<11>cm<-2> can be obtained; and the zinc oxide nano granules can be used for a photoelectric conversion material for a solar cell.

Description

technical field [0001] The invention relates to a high-density zinc oxide nano particle and a preparation method thereof, belonging to the field of high-efficiency solar cells or photoelectric conversion devices. Background technique [0002] With the continuous development of nanoscale integrated circuit manufacturing technology, many process technologies are not only suitable for the manufacture of large-scale integrated circuits, but also can be applied to other technical fields. In the application field of photovoltaic devices, zinc oxide is a wide bandgap semiconductor material (bandgap is 3.37 eV at room temperature), has a large exciton binding energy (60 meV) and high visible light transmittance, so in It has a good application prospect in optoelectronic devices. Since the semiconductor nanoparticles do not have the impact ionization of a large number of carriers in other materials, the nanoparticles can generate multiple electron-hole pairs after absorbing a photon...

Claims

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Application Information

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IPC IPC(8): C01G9/03B82Y40/00
CPCC23C16/45553C30B29/16C01P2002/10H01L21/02381C01G9/03C30B25/00H01L21/02554H01L21/0259C23C16/407C30B25/02H01L21/02488H01L21/0262
Inventor 丁士进钱可嘉张卫
Owner FUDAN UNIV
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