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Perpendicular magnetic anisotropic multi-layered film

An anisotropic and perpendicular magnetic technology, applied in the direction of the magnetic layer, can solve the problems of spin scattering enhancement, high magnetoresistance, and difficult magnetic moment, so as to reduce the reversal field or reversal current, improve the magnetoresistance, The effect of reducing the coercive force

Active Publication Date: 2010-10-20
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As mentioned earlier, it is difficult to obtain high magnetoresistance by directly using materials with perpendicular magnetic anisotropy in the magnetoresistance structure, mainly because the material with perpendicular magnetic anisotropy and the intermediate nonmagnetic structure of the spin valve structure The interface of the barrier layer of the metal layer or the magnetic tunnel junction structure is difficult to optimize, the spin polarizability of the interface is small or the spin scattering is enhanced due to the spin-orbit coupling near the interface, etc.
[0009] In addition, for a tunnel junction structure using a perpendicular magnetic anisotropy material as one or both of the magnetic layers, when the thickness of the barrier layer in the film structure is relatively thin, the magnetostatic interaction between the two magnetic layers The enhancement will make it difficult for the magnetic moment of the magnetic layer with perpendicular magnetic anisotropy to form an ideal direction perpendicular to the film plane, which will also affect the size of the tunneling magnetoresistance and the accuracy of its response to the external field

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] Such as figure 2 As shown, the structure of the multilayer film with perpendicular magnetic anisotropy in this embodiment is as follows: SUB / UL / P-FM / TFM / NM / FM / CAP. The multilayer film structure can be used as the core unit of giant magnetoresistance devices.

[0063] The preparation method of the multilayer film with perpendicular magnetic anisotropy of the present embodiment is as follows:

[0064] 1) Choose a Si-SiO with a thickness of 1mm 2 The substrate is used as the substrate SUB, and the vacuum on the magnetron sputtering equipment is better than 2×10 -6 Pa, the deposition rate is 0.1nm / s, and the argon pressure during deposition is 0.07Pa, and a 10nm Pt bottom layer UL is deposited on the substrate;

[0065] 2) On the magnetron sputtering equipment, the vacuum is better than 2×10 -6 Pa, the deposition rate is 0.1nm / s, and the argon pressure is 0.07Pa. A magnetic layer [Pt(0.6nm) / Co(0.4nm)] with a vertical magnetic anisotropy of 55nm is deposited on the bott...

Embodiment 2

[0072] Such as Figure 5 As shown, the structure of the multilayer film with perpendicular magnetic anisotropy provided in this embodiment is as follows: SUB / UL / P-FM / TFM / I / FM / CAP. The multi-layer film structure can be used as the core unit of the tunnel junction magnetoresistive device.

[0073] The preparation method of the multilayer film with perpendicular magnetic anisotropy of the present embodiment is as follows:

[0074] 1) Choose a Si-SiO with a thickness of 1mm 2 The substrate is used as the substrate SUB, and the vacuum on the magnetron sputtering equipment is better than 2×10 -6 Pa, the deposition rate is 0.1nm / s, and the argon pressure during deposition is the condition of 0.07Pa, the bottom layer UL of Ta(5nm) / Ru(10nm) / Ta(5nm) is deposited on the substrate;

[0075] 2) On the magnetron sputtering equipment, the vacuum is better than 2×10 -6 Pa, the deposition rate is 0.1nm / s, and the argon pressure is 0.07Pa, the magnetic layer structure [Pt(0.7nm) / Co(1.2nm)] ...

Embodiment 3～8

[0082] Embodiment 3~8 is that the structure that is used for giant magnetoresistance device is the multilayer film of SUB / UL / P-FM / TFM / NM / FM / CAP (such as figure 2 Shown), the concrete material that each layer of described multilayer film adopts and the thickness of each layer are as shown in Table 1.

[0083] ("Metal layer" in the following table represents a metal layer that together constitutes a composite magnetic layer with a magnetic layer having perpendicular magnetic anisotropy)

[0084] Table 1

[0085]

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Abstract

The invention relates to a perpendicular magnetic anisotropic multi-layered film, which comprises a substrate, a bottom layer, a lower magnetic layer, a middle layer, an upper magnetic layer and a covering layer, wherein at least one of the lower magnetic layer and the upper magnetic layer is a composite magnetic layer which consists of a main layer and a transitional layer, the main layer is made of perpendicular magnetic anisotropic material, and the transitional layer is made of magnetic metal material with spin polarization higher than the spin polarization of the perpendicular magnetic anisotropic material, and is positioned between the main layer and the middle layer. When the middle layer is a barrier layer, the composite magnetic layer also can be made of metal material with a spin diffusion length larger than 3nm. Under the premise of guaranteeing excellent perpendicular magnetic anisotropy, the invention can enhance the magnetoresistance property, reduce mutual magnetostatic reaction and decrease the reverse field or reverse current of a corresponding device. The invention is applicable to giant magnetoresistance devices or tunneling magnetoresistance devices, such as magnetic sensors, magnetic random-access memorys and magnetic logic devices.

Description

technical field [0001] The invention belongs to the field of spintronics materials, in particular, the invention relates to a multilayer film with perpendicular magnetic anisotropy for magnetoresistance effect devices. Background technique [0002] Devices based on the magnetoresistance effect, especially the giant magnetoresistance effect and tunneling magnetoresistance effect, can obtain a large magnetoresistance, and the production process is compatible with conventional semiconductor processes, so it has great application prospects in industry. The spin valve structure and the magnetic tunnel junction structure are two commonly used magnetoresistive device structures, and the magnetic electrodes of the spin valve structure and the magnetic tunnel junction structure can use materials with perpendicular magnetic anisotropy (such as Co / Pt multi- Laminate, L 10 -FePt alloy) production. figure 1 It shows a kind of vertical magnetic anisotropic multilayer film for tunnel jun...

Claims

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Application Information

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IPC IPC(8): H01F10/08H01F10/14
Inventor 马勤礼魏红祥王守国韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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