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Preparation method of high-temperature and high-power field effect transistor

A field-effect transistor and high-power technology, which is applied in the field of high-temperature, high-power metal-oxide-semiconductor field-effect transistor preparation, can solve the problems of many defects, difficult speed improvement, poor uniformity, etc., and achieve good temperature stability sex, performance-improving effects

Inactive Publication Date: 2010-10-13
SHANGHAI UNIV
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Problems solved by technology

[0005] Due to the extremely difficult preparation of single crystal diamond films, the doped diamond-based FETs currently being developed in the world all use polycrystalline diamond films, while polycrystalline diamond films have chaotic grain boundaries, many defects, rough surfaces, poor uniformity, and hole migration. Low rate (single crystal diamond theoretical value 1600cm 2 / v s, the actual value of polycrystalline diamond is only 1-80cm 2 / v s) and other shortcomings, which makes the channel mobility of FET devices low and the speed is difficult to increase

Method used

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  • Preparation method of high-temperature and high-power field effect transistor
  • Preparation method of high-temperature and high-power field effect transistor
  • Preparation method of high-temperature and high-power field effect transistor

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Embodiment

[0024] In this embodiment, the preparation process and steps of a semiconductor field effect transistor based on a p-type doped single crystal diamond film are as follows:

[0025] (1) Preparation of p-type boron-doped single-crystal diamond thin film: use purchased 2×2mm 2 I b type single crystal diamond as the deposition substrate. Ultrasonic cleaning in acetone solution for 10 minutes, dried and placed in a microwave plasma chemical vapor deposition (MPCVD) device.

[0026] First use a vacuum pump to evacuate the MPCVD reaction chamber to 5Pa, and then use a molecular pump to evacuate the reaction chamber to 5×10 -3 Pa, feed the mixed reaction gas of methane, hydrogen and diborane, adjust the flow of methane, hydrogen and diborane to be 1 standard ml / min, 120 standard ml / min and 2 standard ml / min respectively; the air pressure in the reaction chamber The setting is 0.2kPa, the substrate temperature is controlled at 690°C, the microwave power is set at 2350W, and the film...

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Abstract

The invention relates to a preparation method of a high-temperature and high-power metal-oxide-semiconductor field effect transistor (MOSFET) based on a p-shaped boron-doped single-crystal diamond film, which belongs to the technical field of production processes of inorganic nonmetal metal devices. The preparation method is mainly characterized by comprising the following steps: producing a source electrode, a drain electrode and a grid electrode on the p-shaped boron-doped single-crystal diamond film; using gold electrodes as the source electrode and the drain electrode and using a lead electrode as the grid electrode; and adopting SiOx as an insulating layer between the grid electrode and a p-shaped diamond film. The p-shaped boron-doped single-crystal diamond film is deposited by adopting a microwave plasma chemical vapor deposition method (MPCVD) and a semiconductor field effect transistor device is prepared on the basis. The stable work temperature of the device can reach 690DEG C.

Description

technical field [0001] The invention relates to a method for preparing a high-temperature, high-power metal-oxide-semiconductor field-effect transistor (MOSFET) based on a p-type doped single-crystal diamond film, and belongs to the technical field of inorganic metal material device manufacturing technology. Background technique [0002] A field effect transistor (field effect transistor, FET) is a three-terminal active device, which controls the magnitude of the current at the other two ends (source, drain) through the power supply of the third terminal (gate). Among various FETs, oxide-semiconductor field effect transistor (MOSFET) is the most important and widely used device in VLSI such as microprocessor and semiconductor memory. [0003] At present, FETs generally use Si and GaAs materials. However, due to the limitations of their own physical properties, these materials have a relatively low operating temperature (theoretical limit operating temperature is less than 1...

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Application Information

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IPC IPC(8): H01L21/335H01L21/365H01L21/28
Inventor 王林军张凤娟黄健唐可曾庆锴夏辅元张继军闵嘉华
Owner SHANGHAI UNIV
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