Method for carrying out image force compensation amendment on height of schottky barrier

Abstract

The invention discloses a method for carrying out image force compensation amendment on height of a schottky barrier, wherein the height of the schottky barrier is extracted by a J-V standard method. The method comprises the following steps: combing a GaN high electron mobility transistor device structure, deducing the function of one dollar of a non-interfacial layer or an interface layer, according to the law that forward voltage barrier height image force impacts the barrier height, determining the accumulative impact on the potential barrier, caused by the reduced amount of the equivalentbarrier to approximately replace a certain voltage range; and using an MATLAB programme to solve the zone of an unitary high function, wherein a recent value of the zone, which is larger than the barrier height value obtained by the standard J-V measurement, is the height value of modified schottky barrier. The invention compensates the reduction of height of the barrier, caused by image force, rationally obtains height of the thermal equilibrium state barrier, and modifies the height of the barrier from a new perspective.

Description

technical field [0001] The invention relates to the technical field of analysis of Schottky characteristic parameters, in particular to a method for performing image force compensation correction on the potential barrier height in the Schottky characteristic parameters extracted by using the J-V standard method. Background technique [0002] When developing GaN HEMTs, in order to obtain very high transconductance, the quality of the Schottky structure formed by the gate and semiconductor GaN is very critical, and the accurate extraction of Schottky electrical parameters is of great significance for device modeling and reliability evaluation. , especially when comparing reliability experimental data, the precise measurement of Schottky electrical parameters is particularly important for the results. [0003] Using the J-V standard method to extract the Schottky barrier height will inevitably introduce the influence of the image force, thereby reducing the extracted Schottky b...

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Problems solved by technology

[0003] Using the J-V standard method to extract the height of the Schottky barrier will inevitably introduce the influence of the image force, thereby reducing the extracted height of the Schottky barrier

Compared with Si and GaAs, the GaN material has a smaller high-frequency dielectric constant, which makes the barrier reduction caused by the image force more obvious, which brings disadvantages to the accurate extraction of the barrier height.

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