Conductive oxide transition layer and phase-changing memory unit with same

Abstract

The invention provides a conductive oxide transition layer and a phase-changing memory unit with same and the phase-changing memory unit comprises a conductive oxide transition layer between a bottom electrode and a chalcogenide film with the thickness controlled to 2-10nm. The conductive oxide transition layer of the invention has good thermal stability, has good adhesivity to medium material, chalcogenide and W electrode, has lower thermal conductivity so that the heat efficiency of devices can be effectively improved and has better electroconductibility so that a big capacitor can be avoided to introduce. By planting the new conductive oxide transition layer material, the heating efficiency of devices can be improved effectively so that the operative voltage can be reduced, the diffusion of Sb and Te elements to the direction of the bottom W electrode in the phase-changing material can be avoided, and the chemical reaction between the transition layer and the bottom W electrode andthe phase-changing material can not be performed, thus ensuring the consistency of the operation in the duty-cycle operation of devices and increasing the device life of devices.

Description

technical field [0001] The invention relates to the structure, preparation method and material of the phase change memory, in particular to a conductive oxide transition layer for improving the thermal efficiency of the phase change memory and reducing the power consumption of the phase change memory unit and its realization method. The invention belongs to the field of microelectronic nano material and device preparation. Background technique [0002] Phase Change Memory (Phase Change Memory, PCM) is a new type of semiconductor memory, which uses chalcogenide compounds as storage media, and uses electric energy (heat) to make materials change between crystalline (low resistance) and amorphous (high resistance) The mutual conversion between them realizes the writing and erasing of information, and the reading of information is realized by measuring the change of resistance. Compared with a variety of semiconductor storage technologies currently available, including conventi...

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Problems solved by technology

The loss of too much heat through the bottom electrode will inevitably lead to an increase in the operating voltage / current during the phase transition process, and the energy consumption will increase accordingly, which will affect the voltage / current matching with the CMOS, and the excessive heat that spreads to the bottom of the device will affect the bottom of the device. The stability of CMOS operation is a potential detriment

In addition, in the phase change material containing Sb and Te elements, in the process of phase change operation, long-term repeated high-temperature writing and erasing operations will cause the composition segregation inside the material itself, and Sb or Te will move toward the interface between the phase change material and the dielectric material. The phenomenon of segregation and reaction with active electrode materials has also been proved to be a great threat to device reliability

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