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Method for preparing copper nitride film by ion beam enhanced deposition

An ion beam enhancement, copper nitride technology, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problems of difficult combination of metals, little attention, and reduced reactivity between metals and nitrogen, etc. Stable performance and good uniformity

Inactive Publication Date: 2009-04-22
JIANGSU POLYTECHNIC UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for some nitrides bonded by covalent bonds, since such metals are not easy to directly combine with nitrogen (such as Cu 3 N, Ni 3 N, Sn 3 N 4 etc.) with little attention
It is theoretically concluded that in the nitrides of 3d-type transition metals (Ti, Fe, Ni and Cu), as the atomic number increases, the reactivity of the metal with nitrogen decreases

Method used

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  • Method for preparing copper nitride film by ion beam enhanced deposition
  • Method for preparing copper nitride film by ion beam enhanced deposition
  • Method for preparing copper nitride film by ion beam enhanced deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] High-purity copper is selected as the target material, and it is fixed on a square target platform with special copper screws. During the sputtering process, circulating cooling water is used to cool the target material. Select the above sputtering target, while sputtering the copper target, and use pure N 2 or Ar:N 2 The mixed ion beam produced by the 1:5 mixed high-purity gas bombards the deposited film. The accelerating voltage of the implanted ion beam is 10kV, and the beam intensity is 1mA. The damage effect of high-dose ion implantation breaks the Cu bond; the implanted N+ combines with Cu to form a cubic anti-ReO 3 Type crystal structure of high resistivity Cu 3 N film. The nitrogen or argon / nitrogen mixed beam generated by the bombardment ion source has a beam diameter greater than 150mm and a non-uniformity less than 15%. Uniform, highly oriented Cu 3 N polycrystalline structure.

[0022] The ion beam enhanced deposition copper nitride film prepared by th...

Embodiment 2

[0024] 99.99% high-purity copper is selected as the target material, fixed on a square target platform with special copper screws, and the target material is cooled by circulating cooling water during the sputtering process. Select the above sputtering target, while sputtering the copper target, and use pure N 2 or Ar:N 2 The mixed ion beam generated by the 1:5 mixed high-purity gas bombards the deposited film. The accelerating voltage of the implanted ion beam is 30kV, and the beam current intensity is 2mA. The damage effect of high-dose ion implantation breaks Cu bonds; implanted N + Combined with Cu to form a cubic anti-ReO 3 Type crystal structure of high resistivity Cu 3 N film. The nitrogen or argon / nitrogen mixed beam generated by the bombardment ion source has a beam diameter greater than 150mm and a non-uniformity less than 15%. Uniform, highly oriented Cu 3 N polycrystalline structure.

[0025] The ion beam enhanced deposition copper nitride film prepared by t...

Embodiment 3

[0027] High-purity copper is selected as the target material, and it is fixed on a square target platform with special copper screws. During the sputtering process, circulating cooling water is used to cool the target material. Select the above sputtering target, while sputtering the copper target, and use pure N 2 or Ar:N 2 The mixed ion beam generated by the 1:5 mixed high-purity gas bombards the deposited film. The accelerating voltage of the implanted ion beam is 50kV, and the beam intensity is 4mA. The damage effect of high-dose ion implantation breaks Cu bonds; implanted N + Combined with Cu to form a cubic anti-ReO 3 Type crystal structure of high resistivity Cu 3 N film. The nitrogen or argon / nitrogen mixed beam generated by the bombardment ion source has a beam diameter greater than 150mm and a non-uniformity less than 15%. Uniform, highly oriented Cu 3 N polycrystalline structure.

[0028] The ion beam enhanced deposition copper nitride film prepared by the ab...

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Abstract

The invention discloses a method for preparing a copper nitride film through the enhanced deposition of ion beams. Copper with high purity is used as a sputtering target; mixed ion beams produced by pure N2 or mixed high-purity gas with the ratio of Ar to N2 of 1 to 5 attacks a deposition film and are vertically injected to the sputtering deposition film; the accelerating voltage of the ion beam is between 10 and 50kV; the strength of beam current is between 1 and 4 mA; even injection is realized through revolution of a sample table and autorotation of a sample to ensure that the film has an even Cu3N polycrystalline structure with high tropism in subsequent crystallization and heat treatment; at the same time, polycrystalline structure is deposited on a SiO2 / Si underlayer to prepare the even and compact copper nitride film which has good adhesion with an underlayer and has resistivity of more than 1.0*10<3> omega.cm. The method for preparing a copper nitride film meets the requirement of industrialized production, has low film forming temperature, is compatible with a semiconductor process and has no emission of waste.

Description

technical field [0001] The present invention relates to a kind of copper nitride (Cu 3 N) A thin film preparation method, in particular a method for preparing a copper nitride thin film by ion beam enhanced deposition. Background technique [0002] Copper nitride is a non-toxic and cheap material with low thermal decomposition temperature, high resistivity, reflectivity to infrared light and visible light, which is significantly different from Cu single substance, and can be used in optical storage devices and high-speed integrated circuits . For a long time, people's research on nitrides has mainly focused on those substances with high hardness, high melting point, good chemical stability and optical properties (such as binary metal nitrides such as TiN, BN, and AlN). However, for some nitrides bonded by covalent bonds, since such metals are not easy to directly combine with nitrogen (such as Cu 3 N, Ni 3 N, Sn 3 N 4 etc.) with little attention. It is theoretically c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/48C23C14/06C23C14/54C23C14/58
Inventor 袁宁一丁建宁李锋
Owner JIANGSU POLYTECHNIC UNIVERSITY
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