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Method for preparing high quality ZnO film using cushioning layer

A buffer layer, high-quality technology, applied in chemical instruments and methods, from chemical reactive gases, single crystal growth, etc., can solve the problems of reducing device performance and increasing insertion loss

Inactive Publication Date: 2008-12-17
SHANGHAI UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

Non-oriented grains and other defects in the film will reduce the performance of the device and increase the insertion loss

Method used

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  • Method for preparing high quality ZnO film using cushioning layer
  • Method for preparing high quality ZnO film using cushioning layer
  • Method for preparing high quality ZnO film using cushioning layer

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Experimental program
Comparison scheme
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Embodiment 1

[0048] The technological process and steps of the present embodiment are as follows:

[0049] (1) Preparation of self-supporting diamond film:

[0050] (1) Tantalum wire pretreatment:

[0051] Grind the surface of the tantalum wire with a sandpaper, vacuumize to 5Pa, then pass in hydrogen and acetone at 200sccm and 50sccm respectively, adjust the air pressure to 5KPa, heat to 430°C, and pretreat for 30 minutes.

[0052] (2) Substrate and its pretreatment

[0053] A p-type 1cm×1cm silicon wafer is used as the substrate, and its mirror surface is used as the diamond growth surface. Si was first placed in HF solution for 10 minutes, and then manually ground for 15 minutes with a mixture of ultrafine diamond powder and glycerin with a particle size of 100 nm. After grinding, the substrate was cleaned in an ultrasonic bath in acetone solution for 15 minutes, then placed in an ultrasonic bath of deionized water for 15 minutes, and the above cleaning steps were repeated 3 times, a...

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Abstract

The invention relates to a method that prepares a high-quality ZnO film by utilizing a buffer layer, which comprises following main steps: a silicon substrate is preprocessed and placed into a reaction chamber of a hot filament chemical vapor depositing device as a deposited substrate; nucleation and growth of a diamond film are implemented in mixed reaction gases of hydrogen and acetone, and the silicon substrate is soaked and rusted in a mixed solution of HNO3 and HF, thus forming the self-supporting diamond film; the ZnO film is prepared on the self-supporting diamond film by the direct current magnetron sputtering method, the ZnO buffer layer is firstly sputtered and deposited in Ar and O2, and then a ZnO main layer is deposited. The method that prepares the high-quality ZnO film has simplified techniques and low cost and is favor for promoting large-scale application of high-quality ZnO film devices. The produced ZnO film has small crystal grain size, high crystal quality and low surface roughness.

Description

technical field [0001] The invention relates to a method for preparing a high-quality ZnO thin film by using a buffer layer, and belongs to the field of inorganic non-metallic material manufacturing technology. Background technique [0002] With the development of the third-generation communication technology, the frequency of use of surface acoustic wave (SAW) devices has been increasing, from the initial few MHz to the current few GHz, such as the personal communication service system applied to 1.9GHz, the wireless of 2.4GHz Local area network system and wireless multi-terminal transmission system higher than 5GHz. The continuous development of these high-frequency application systems has significantly increased the market demand for high-frequency surface acoustic wave devices. However, traditional SAW materials have a low sound velocity, usually lower than 4000m / s, and only devices with relatively low frequencies can be prepared. [0003] Diamond has the fastest sound...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/06C30B25/18C30B29/16
Inventor 王林军唐可黄健赖建明管玉兰夏义本
Owner SHANGHAI UNIV
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