Gliding quartz boat for growth low-melting point semiconductor material

Abstract

A slide quartz boat used for growing semi-conductor materials with low melting point relates to a growing boat used for growing semi-conductor materials with low melting point, which is made by adopting high-purity quartz and comprises a briquetting (4) which is arranged on the upper portion, a bottom board (1) which is arranged on the lower portion and a quartz push rod (3) which is fixedly solidified on the briquetting (4), wherein a groove is arranged on the bottom board (1), a substrate (5) is arranged on in the groove, two wells (L1, L2) which cut through the briquetting (4) on two vertical directions are arranged in the middle of the briquetting (4), growing solution (2) is arranged in the wells, the bottom surface of a flat-bottom part of the growing boat is polished, which enables the smoothness degree to reach the mirror level and enables the grown out epitaxial layer to have a smooth surface, and the briquetting (4) is matched with the bottom board (1) and moves horizontally along the bottom board (1) according to requirements. The growing boat has the advantages that the growth of alloplasm epitaxy simgle-crystal materials which is under the condition that the crystal lattice mismatch degree between the epitaxial layer and the substrate is more than 5% is realized, the quartz doesn't adsorb foreign matter, the electricity performance is good, the cut-off wavelength of the epitaxial layer doesn't change with the thickness of the epitaxial layer, and the growing boat is in particular suitable for growing narrow forbidden region materials.

Description

technical field [0001] The invention relates to a growth boat for growing semiconductor materials, in particular to the improvement of the structure of the growth boat. The growth boat can grow semiconductor materials with low melting point, and can improve the degree of lattice mismatch between the epitaxial layer and the substrate. In the case of >5%, a high-quality heteroepitaxial single crystal material is grown. Background technique [0002] III-V semiconductors are important materials for making optoelectronic devices, and have relatively mature material preparation and device process technologies. InAsSb (indium arsenic antimony) ternary alloy material has the smallest forbidden band width (0.1eV) in the conventional III-V group compounds, and its cut-off wavelength at room temperature can reach 12 μm. The wavelength range of 8-12μm is an important infrared atmospheric window. Infrared detectors working in this band have very important and broad application prospe...

AI Technical Summary

Problems solved by technology

However, it is not suitable for growing materials with a large lattice mismatch between the epitaxial layer and the substrate material. In the case of a lattice mismatch between the epitaxial layer and the substrate > 5%, it is difficult to grow high-quality heterogeneous epitaxial single crystal material

In addition, because graphite is composed of carbon elements, carbon contamination is introduced during the growth of the material, and the porosity of graphite is easy to adsorb impurities, which affect the electrical properties of the material.

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