The cleaning method for removing the impure ion from the semiconductor pipe core assembly
A semiconductor tube and impurity removal technology, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the quality of semiconductor diodes cannot be further improved, the reverse cut-off performance of semiconductor diodes is unstable, and the unidirectional conduction effect is lost. problem, to achieve the effect of less pollution, eliminating tip discharge and improving stability
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Embodiment 1
[0011] The cleaning method of the semiconductor die assembly of the present invention to remove impurity ions, (1), the semiconductor die assembly to be cleaned is inserted in the cleaning tank, the corrosive agent is poured into the cleaning tank, and the corrosive agent is: Analytical grade or superior pure 20%~30% nitric acid, 20%~30% hydrofluoric acid, 8%~15% sulfuric acid and 30%~40% glacial acetic acid mixed solution, the time is controlled within 1~10min, The cleaning tank tilts to remove the corrosive agent, sprays the surface of the semiconductor die assembly with high-pressure deionized water, and quickly rinses the surface of the semiconductor die assembly obliquely. (2) After the cleaning tank enters the next station and resets, pour the pre-cleaning agent into the cleaning tank. The pre-cleaning agent is analytical grade or pure 15% to 35% phosphoric acid, 15% to 35% pure A mixed solution of hydrogen peroxide and 40% to 60% deionized water, while removing metal io...
Embodiment 2
[0013] The cleaning method of the semiconductor die assembly of the present invention to remove impurity ions, (1), insert the semiconductor die assembly to be cleaned in the cleaning tank, pour the corrosive agent into the cleaning tank, and the corrosive agent It is a mixed solution of analytical grade or superior pure 23% to 28% nitric acid, 23% to 28% hydrofluoric acid, 10% to 12% sulfuric acid and 32% to 38% glacial acetic acid, and the time is controlled within 5 to 10 minutes , The cleaning tank tilts to remove the etchant, sprays the surface of the semiconductor die assembly with high-pressure deionized water, and quickly rinses the surface of the semiconductor die assembly obliquely. (2) The cleaning tank enters the next station and resets. Pour the pre-cleaning agent into the cleaning tank. The pre-cleaning agent is analytical grade or pure 20% to 30% phosphoric acid, 20% to 30% hydrogen peroxide Mixed solution with 40%~50% deionized water, while removing metal ions ...
Embodiment 3
[0015]The cleaning method of the semiconductor die assembly of the present invention to remove impurity ions, (1), insert the semiconductor die assembly to be cleaned in the cleaning tank, pour the corrosive agent into the cleaning tank, and the corrosive agent It is a mixed solution of analytical grade or superior pure 20%~30% nitric acid, 20%~30% hydrofluoric acid, 8%~15% sulfuric acid and 30%~40% glacial acetic acid, the time is controlled within 1~10min, and the cleaning The tank is tilted to remove the etchant, and the surface of the semiconductor die assembly is sprayed with high-pressure deionized water to quickly rinse the surface of the semiconductor die assembly. (2) The cleaning tank enters the next station, resets and pours the pre-cleaning agent into the cleaning tank. The pre-cleaning agent is analytical grade or pure 15% to 35% phosphoric acid, 15% to 35% hydrogen peroxide and A mixed solution of 40% to 60% deionized water, while removing metal ions and organic ...
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