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Laser unit produced by using cleavable laser crystal

A technology of laser crystals and laser devices, which is applied in the direction of active dielectric materials, can solve problems such as difficulty in obtaining large-size rod-shaped laser gain media, and achieve the effects of overcoming the difficulty of processing, avoiding defects and impurities, and high smoothness

Inactive Publication Date: 2007-02-21
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Some laser crystals also have cleavage phenomenon, so it is difficult to obtain large-size rod-shaped laser gain medium

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0012] Example 1: 5.6at% Nd pumped by 799nm semiconductor laser 3+ Activated cleavable La(BO 2 ) 3 The flake achieves 1060nm laser output.

[0013] La(BO 2 ) 3 The crystal belongs to the monoclinic system, the space group is C2 / c, and its unit cell parameters are a=9.946 Ȧ, b=8.163 Ȧ, c=6.497 Ȧ, α=γ=90°, β=127.06°, Z=4. The crystal can be Nd 3+ Ions are activated and can be cleaved along the (10 1) plane. At 799nm, Nd 3+ Ions have a strong absorption peak for light incident perpendicular to the cleavage plane, and the absorption cross section is 5.0×10 -20 cm 2 . to Nd 0.056 La 0.944 (BO 2 ) 3 The crystal peeled off a 200 μm thick sheet along the (10 1) cleavage plane. The surface smoothness of the sheet was 20 / 10, the flatness was less than 1 / 4 wavelength at 633nm wavelength, and the parallelism was about 10 seconds. Directly plate a dielectric film that is highly reflective to both the pump light and the fundamental wave laser on one of the cleaved end faces of...

example 2

[0014] Example 2: 5.6at% Nd pumped by 799nm semiconductor laser 3+ Activated cleavable La(BO 2 ) 3 The thin slice realizes frequency-doubling 530nm green laser output in the cavity.

[0015] Directly insert a nonlinear optical crystal (such as KTP, LBO, β-BBO, etc.) with a frequency doubling of 1060nm between the uncooled end face of the sheet in Example 1 and the output cavity mirror, and coat the output cavity mirror with high reflection at 1060nm, 530nm Highly transparent dielectric film. This is a 799nm semiconductor laser end-face or side-pumped 530nm green solid-state laser device with intracavity frequency doubling thin slice laser. The output cavity mirror can also be directly plated on the output end surface of the nonlinear optical crystal; or the sheet can be pasted with the nonlinear optical crystal, and the same purpose can be achieved by using a side pumping scheme.

example 3

[0016] Example 3: 5.6at% Nd pumped by 799nm semiconductor laser 3+ Activated cleavable La(BO 2 ) 3 The flake achieves 1060nm passive Q-switched pulsed laser output.

[0017] Directly Q-switching chip (such as Cr 4+ : YAG, GaAs, etc.) are inserted between the non-cooled end face of the sheet in Example 1 and the output cavity mirror, and the transmittance at 1060nm is plated on the output cavity mirror between 1% and 20% (determined according to the pump light power ) of the dielectric film. This is a 799nm semiconductor laser end-face or side-pumped passive Q-switched thin-sheet laser device that outputs 1060nm Q-switched pulsed laser. It is also possible to directly plate the output cavity mirror on the output end surface of the Q-switching chip; or paste the sheet and the Q-switching chip, and use a side pumping scheme to achieve the same purpose.

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PUM

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Abstract

Possessing perfect cleavage capability, laser crystal RxM1-x (BO2)3 or RxM1-xB2O4 or RxM1-xF2 as laser gain mediums are adopted for the laser unit in the invention. Using conventional cleavage method carries out manual cleavage for laser crystal of possessing perfect cleavage capability in high optical quality so as to obtain laser gain mediums with thickness less than 3mm. The invention eliminates fabricating steps such as cutting, thinning and polishing laser mediums, and prevents defects and impurities caused by the said fabricating steps.

Description

technical field [0001] The invention relates to the field of laser crystals and devices. Background technique [0002] The biggest problem hindering the development of solid-state lasers to high average power is the heat generated by the laser medium during optical pumping. The waste heat deposited in the laser medium will cause effects such as thermal lens, thermally induced birefringence and thermal stress, and thus cause the degradation of the laser output beam quality, the reduction and instability of the laser output power, and may even cause the laser medium to break . If the thin-disk laser or slab laser design scheme (Optics and Lasers in Engineering, 34 (2000) 213-229) is used, the laser medium is processed into a slab or slab with a thickness of less than 3 mm. Thin slices, and then cooling one or both end faces of the above-mentioned laser medium can not only effectively dissipate the heat in the laser medium, but also make the heat flo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/16
Inventor 陈雨金黄艺东龚兴红林炎富林秀钦罗遵度谭奇光
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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