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Sputtering target and its production method

A manufacturing method and technology for sputtering targets, applied in the field of sputtering targets, can solve the problems of environmental pollution, easy occurrence of film defects, film defects, etc., and achieve the effect of reducing abnormal discharge

Inactive Publication Date: 2006-11-22
SUMITOMO METAL MINING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the chromium film is formed by sputtering, it is easy to cause film defects
[0008] Moreover, when chromium is used for thin film components such as black matrix, there is a problem that hexavalent chromium ions appear when etching is performed in the process of patterning, thereby causing pollution to the environment
However, there is a problem that nodules are formed on the surface of the target when oxygen is mixed with Ar gas, and abnormal discharge is prone to occur
Also prone to membrane defects

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Metal Ni (electrolytic nickel, purity: 99.99 wt%), metal W (purity: 99.99 wt%), and metal Al (Al bare metal, purity: 99% or higher) were weighed in a total weight of about 30 kg so that The composition is W, 15 wt%; Al, 2 wt%; and the balance is Ni.

[0050] Mix various raw materials to obtain the above composition, use a high-frequency vacuum melting furnace to melt the composition under vacuum conditions, use a mold for casting, and then perform hot forging and hot rolling under vacuum and 1100°C until the thickness of the plate is 8mm, and then heat-treated under vacuum and 750°C. Afterwards, turning and plane polishing were carried out, and then the material was cut into a sheet with a diameter of 152 mm and a thickness of 5 mm, which was welded to a steel backing plate by a metal welding method to obtain a sputtering target with the above composition. Surface polishing was carried out using a grinding stone with a #60 grain size, 6-8 μm grinding depth, and 25 m / mi...

Embodiment 2

[0058] In order to investigate the effect of surface roughness, when performing surface polishing, a sputtering target was fabricated in the same manner as in Example 1, but polished with a grindstone with #40 grain size, 15 μm grinding depth and 25 m / min grinding speed , the obtained target surface roughness Ra was 12 μm. In addition, sputtering and film production were also performed in the same manner as in Example 1. The number of particles in the obtained film was measured in the same manner as in Example 1. Also, the contact angle between the obtained film and the photoresist was measured in the same manner as in Example 1.

[0059] The oxygen content, average particle size and surface roughness Ra of the obtained targets, as well as the measurement results of the number of particles with a particle size of 3 μm or more in the film obtained by sputtering are listed in Table 1. In addition, the measurement results of the contact angle between the obtained film and the p...

Embodiment 3

[0062] Metal Ni is replaced by high-purity Ni (99.995 wt%, oxygen content 0.001% or less), and metal Al is replaced by high-purity Al (purity 99.999 wt%, oxygen content 0.002% or less), except that The sputtering target was manufactured according to the method of Example 1 except that the raw material was changed to a raw material with low oxygen content. In addition, sputtering and film production were also performed in the same manner as in Example 1, and the number of particles in the obtained film was measured in the same manner as in Example 1. Also, the contact angle between the obtained film and the photoresist was measured in the same manner as in Example 1.

[0063] The oxygen content, average particle size and surface roughness Ra of the obtained target, and the number of particles with a particle size greater than or equal to 3 μm in the film obtained by sputtering are listed in Table 1. In addition, the measurement results of the contact angle between the obtained...

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Abstract

A sputtering target and a manufacturing method thereof are provided to acquire a black matrix thin film without Cr and to reduce an environmental pollution. A sputtering target is made of tungsten of 5 to 30 weight%, a predetermined material, oxygen, and nickel. The predetermined material is made of at least one selected from a group consisting of aluminium and titanium. The weight% of the predetermined material is in a predetermined range of 0.1 to 10. The weight% of the oxygen is in a predetermined range of 0.05 or less. The mean grain size of the sputtering target is in a predetermined range of 100 mum or less. The surface roughness of the sputtering target is in a predetermined range of 10 mum or less.

Description

technical field [0001] The present invention relates to a sputtering target used when producing a thin film by a sputtering method and a manufacturing method thereof, and more particularly, the present invention relates to a sputtering target suitable for forming a black matrix film and a manufacturing method thereof. Background technique [0002] In the field of optics and the field of microelectronics, various thin film materials obtained by forming a thin film on a base material by a sputtering method or the like are used. One of these materials is the black matrix used in the color filters of displays such as liquid crystal displays or plasma displays. [0003] In liquid crystal displays or plasma displays, color filters are used to display colors according to the light that penetrates from the light source. Such a color filter includes a colored layer, a transparent protective layer, etc. formed on a glass substrate; and is provided with a light-blocking film called a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C19/03C22F1/00C22F1/10C23C14/14G02F1/1335H01J9/20H01J11/22H01J11/34H01J11/44
CPCA61H3/066E01C5/18E01C11/224E01C11/24E01C2201/10
Inventor 森本敏夫远北正和渡边宏幸
Owner SUMITOMO METAL MINING CO LTD
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