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Magnetron electrode for plasma processing

A plasma and magnetron technology, applied in the field of magnetron electrodes for plasma processing, can solve the problems of low productivity and difficulty in increasing the film forming speed, and achieve the effect of less abnormal discharge

Inactive Publication Date: 2013-11-20
TORAY IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with other film-forming methods, the sputtering method has great disadvantages such as difficulty in increasing the film-forming speed and low productivity. speed

Method used

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  • Magnetron electrode for plasma processing
  • Magnetron electrode for plasma processing
  • Magnetron electrode for plasma processing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] In the magnetron sputtering electrode of the present invention, a device for changing the structure and magnetic field strength of the magnetic circuit for the magnetron, and a device for changing the opening width of the anode were produced, and a comparison of the occurrence of abnormal discharge was carried out. The results of the experiment will be described as examples, and the results of the same experiment using a magnetron sputtering electrode other than the present invention will be described as a comparative example.

[0037] First, the specific structure will be described in detail in the specification, and then the difference in structure and the difference in the occurrence status of abnormal discharge will be shown in a list.

[0038] First, explain the corresponding scheme 1, Figure 3b The electrodes shown in the cross-sectional view. The cathode box is made of ferritic stainless steel SUS430. The inner dimensions of the concave part of the cathode box...

Embodiment 2

[0043] The magnetic circuit of the electrode of Example 1 was changed. Specifically, the neomagnet magnetized in the height direction with a length of 40 mm, a width of 10 mm, and a height of 20 mm arranged in the center of the cathode box in the width direction was replaced with a NeoMag company-made neodymium magnet (Grade: N35 ), and arrange them along the length direction so that the magnetization direction faces the height direction and the direction of the opening of the cathode case is the S pole, as the main magnet, and the auxiliary magnet is not used. The surface magnetic flux density of this neodymium magnet was 390 millitesla. Other electrode structures are the same as those in Example 1, and the experimental results are also shown in Table 1. In addition, the occurrence status of abnormal discharge after 3 hours from the start of discharge is also shown in this table.

Embodiment 3

[0045] Change the magnetic circuit of the electrode of embodiment 1, become figure 1 The electrode configuration shown in the cross-sectional view. Specifically, the main magnet arranged in the center of the width direction of the cathode box is unchanged, and an anisotropic ferrite magnet manufactured by Sagami Chemical Metal Co., Ltd. with a length of 65 mm, a width of 4 mm, and a height of 19 mm is placed on the inner surface of the magnetic pole outside the cathode box so that The direction of the opening of the cathode box is set in the manner of N pole as an auxiliary magnet. The surface magnetic flux density of this anisotropic ferrite magnet was 140 millitesla. Other electrode structures are the same as those in Example 1, and the experimental results are also shown in Table 1. In addition, the occurrence status of abnormal discharge after 3 hours from the start of discharge is also shown in this table.

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Abstract

The invention aims to provide a magnetron electrode for plasma treatment that is free of significant abnormal electrical discharge and able to perform electrical discharge with long-term stability. A second electrode is provided only at a position outside the inner side surface of the outer magnetic pole of a first electrode or at a position where the magnetic flux density is low.

Description

technical field [0001] The present invention relates to a magnetron electrode for plasma processing. Background technique [0002] Vacuum thin-film film-forming methods include various film-forming methods such as vapor deposition, sputtering, and CVD, and the optimal film-forming method is selected according to the balance between required film characteristics and productivity. Among them, the sputtering method is often used in the case of forming a film of an alloy-based material or when there is a need to form a homogeneous film over a large area. Compared with other film-forming methods, the sputtering method has great disadvantages such as difficulty in increasing the film-forming speed and low productivity. speed. [0003] Non-Patent Document 1 briefly explains the structure of magnetron discharge. In short, it is a technology that traps electrons in a magnetic current loop to increase the density of plasma. Since high-density plasma promotes sputtering, the magnet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCH01J37/3452H01J37/3405C23C14/35H01J23/02C23C14/3407H01J37/3438
Inventor 川下守植田征典江尻广惠野村文保
Owner TORAY IND INC
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