Sputtering target and process for manufacturing same

A manufacturing method and technology for sputtering targets, which are applied in sputtering coating, vacuum evaporation coating, ion implantation coating and other directions, can solve the problems of difficulty in high density, achieve stable sputtering, improve yield, and reduce abnormal discharge the effect of

Active Publication Date: 2014-11-05
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the above-mentioned component system, when the sintering temperature is increased to achieve high density, it is difficult to increase the density due to the decomposition (evaporation) of ZnO.

Method used

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  • Sputtering target and process for manufacturing same
  • Sputtering target and process for manufacturing same
  • Sputtering target and process for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] Prepare ZnO powder equivalent to 4N of 5 μm or less, MgO powder equivalent to 4N with an average particle diameter of 5 μm or less, and Al equivalent to 4N with an average particle diameter of 5 μm or less. 2 o 3 Powder, SiO equivalent to 4N with an average particle size of 5 μm or less 2 Powder, B equivalent to 4N with an average particle size of 5 μm or less 2 o 3 pink.

[0089] Next, these powders were prepared into the compounding ratio shown in Table 2, and after mixing, hot pressing (HP) was performed at the temperature of 1050 degreeC. The pressure of hot pressing is set to 220kg / cm 2 .

[0090] As shown in Table 2, the ratio of raw materials is set to ZnO powder: 72.0 mol%, MgO powder: 24.6 mol%, Al 2 o 3 Powder: 1.2 mol%, SiO 2 Powder: 2.2 mol%, the total is 100 mol%, and it is made into a basic raw material. Then, further fit B into it 2 o 3 Powder: 1.0% by weight, made into sintered raw material. After sintering, the sintered body is finished into...

Embodiment 2

[0103] Prepare ZnO powder equivalent to 4N of 5 μm or less, MgO powder equivalent to 4N with an average particle diameter of 5 μm or less, and Al equivalent to 4N with an average particle diameter of 5 μm or less. 2 o 3 Powder, SiO equivalent to 4N with an average particle size of 5 μm or less 2 Powder, B equivalent to 4N with an average particle size of 5 μm or less 2 o 3 pink.

[0104] Next, these powders were prepared into the compounding ratio shown in Table 2, and after mixing, hot pressing (HP) was performed at the temperature of 1050 degreeC. The pressure of hot pressing is set to 220kg / cm 2 .

[0105] As shown in Table 2, the ratio of raw materials is set as ZnO powder: 72.0 mol%, MgO powder: 24.6 mol%, Al 2 o 3 Powder: 1.2 mol%, SiO 2 Powder: 2.2 mol%, the total is 100 mol%, and it is made into a basic raw material. Then, further fit B into it 2 o 3 Powder: 0.5% by weight, made into sintered raw material.

[0106] B 2 o 3 The proportioning of powder is l...

Embodiment 3

[0109] Prepare ZnO powder equivalent to 4N of 5 μm or less, MgO powder equivalent to 4N with an average particle diameter of 5 μm or less, and Al equivalent to 4N with an average particle diameter of 5 μm or less. 2 o 3 Powder, SiO equivalent to 4N with an average particle size of 5 μm or less 2 Powder, B equivalent to 4N with an average particle size of 5 μm or less 2 o 3 pink.

[0110] Next, these powders were prepared into the compounding ratio shown in Table 2, and after mixing, hot pressing (HP) was performed at the temperature of 1050 degreeC. The pressure of hot pressing is set to 220kg / cm 2 .

[0111] As shown in Table 2, the ratio of raw materials is set as ZnO powder: 89.3 mol%, MgO powder: 9.2 mol%, Al 2 o 3 Powder: 0.7 mol%, SiO 2 Powder: 0.8 mol%, the total is 100 mol%, and it is made into a basic raw material. Then, further fit B into it 2 o 3 Powder: 1.0% by weight, made into sintered raw material. B 2 o 3 The proportioning of powder is identical w...

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Abstract

A sputtering target characterized by further containing 0.1 to 20wt% (in terms of the weight of oxide) of a metal which can form a low-melting oxide having a melting point of up to 1000°C relative to an elemental composition which has an Al content of 0.2 to 3.0mol% in terms of Al2O3 and a content of Mg and / or Si of 1 to 27mol% in terms of MgO and / or SiO2 with the balance being Zn in an amount in terms of ZnO. The present invention provides: a target which is free from sulfur and has such a low bulk resistance as to permit DC sputtering and which is useful in forming an optical thin film having a low refractive index; and a process for manufacturing the same. The target itself has a high density and therefore enables stable sputtering with little abnormal discharge. A thin film formed by a sputtering method using the target exhibits a high transmittance and is composed of a sulfur-free system, so that a reflecting or recording layer adjacent to the thin film is less susceptible to degradation. Thus, the target is useful in forming a thin film for an optical information recording medium. The sputtering target can improve the characteristics of an optical information recording medium, reduce the facility cost, and enhance the speed of film formation, thus achieving a remarkably improved throughput.

Description

technical field [0001] The present invention relates to a target for forming an optical thin film that does not contain sulfur, has low volume resistance, is capable of DC sputtering, and has a low refractive index, and a manufacturing method thereof. Background technique [0002] In the past, ZnS-SiO, which was widely used mainly in the protective layer of phase-change optical information recording media, 2 It has excellent properties in terms of optical properties, thermal properties, and adhesion to the recording layer, and is widely used. However, the current rewritable optical disc represented by Blu-ray is further strongly required to increase the number of rewritable times, to increase the capacity, and to achieve high-speed recording. [0003] As one of the causes of degradation of the rewritable number of optical information recording media, etc., can be cited from ZnS-SiO 2 The sulfur composition is directed by the protective layer ZnS-SiO 2 Diffusion in recordi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C04B35/453G11B7/24G11B7/254G11B7/257
CPCC23C14/3414C23C14/08C04B35/453C04B35/645C04B2235/3201C04B2235/3206C04B2235/3217C04B2235/3237C04B2235/3239C04B2235/3256C04B2235/3294C04B2235/3296C04B2235/3298C04B2235/34C04B2235/3409C04B2235/3418C04B2235/447C04B2235/5436C04B2235/77C04B2235/3284
Inventor 奈良淳史佐藤和幸
Owner JX NIPPON MINING & METALS CO LTD
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