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Dark ultraviolet negative photoresist and filming resin

A film-forming resin, C1-C20 technology, used in optics, optomechanical equipment, photosensitive materials for optomechanical equipment, etc.

Inactive Publication Date: 2006-08-16
苏州市成技新材料开发有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the actual photolithography process, since the negative photoresist is insoluble in the developer solution due to chemical reactions such as crosslinking under the action of light to form patterns in the exposed area, these patterns must be removed after the process is completed. But it is generally more difficult, so it is not as widely used as positive photoresist

Method used

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  • Dark ultraviolet negative photoresist and filming resin
  • Dark ultraviolet negative photoresist and filming resin
  • Dark ultraviolet negative photoresist and filming resin

Examples

Experimental program
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Effect test

Embodiment 1

[0164] A copolymer film-forming resin containing a silicon coupling agent, prepared from the following comonomers and their contents, in the presence of a free radical initiator, by heating for copolymerization:

[0165] 120 grams of m-hydroxystyrene;

[0166] Styrene 11 grams;

[0167] Propyltrimethoxysilyl methacrylate (KH570) 22 grams.

[0168] The preparation method is: in a 1000ml three-neck flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 120 grams of m-hydroxystyrene, 11 grams of styrene, and propyl methacrylate 8 grams of trimethoxysilyl ester (KH570), 500 grams of tetrahydrofuran, nitrogen gas flow for 10 minutes under stirring, then heated to 60-70 ° C, and a solution of 9.5 grams of azobisisobutyronitrile (AIBN) in 100 grams of tetrahydrofuran was added , continue to reflux the reaction for 6-24 hours, and then cool to room temperature. The polymer solution was extracted three times wi...

Embodiment 2

[0170] A copolymer film-forming resin containing a silicon coupling agent, prepared from the following comonomers and their contents, in the presence of a free radical initiator, by heating for copolymerization:

[0171] 160 grams of p-acetoxystyrene;

[0172] 12 grams of methyl methacrylate;

[0173] Propyltrimethoxysilyl methacrylate (KH570) 9 grams.

[0174] The preparation method is: in a 1000ml three-neck flask equipped with an electric stirrer, a condenser, a thermometer, a temperature controller, a heating mantle and a nitrogen inlet, add 160 grams of p-acetoxystyrene and 12 grams of methyl methacrylate, Propyltrimethoxysilyl methacrylate (KH570) 9 grams, tetrahydrofuran 500 grams, under stirring nitrogen gas for 10 minutes, then heated to 60 ~ 70 ° C, add azobisisobutylnitrile (AIBN) 14 grams in 100 The solution in the gram tetrahydrofuran, after continuing to react and reflux for 8-28 hours, add 80 gram A-15 (Rohm&Haas, Amberlyst 15) ion exchange resin and 200 gram ...

Embodiment 3

[0176] A copolymer film-forming resin containing a silicon coupling agent, prepared from the following comonomers and their contents, in the presence of a free radical initiator, by heating for copolymerization:

[0177] 160 grams of p-acetoxystyrene;

[0178] 10 grams of p-tert-butylstyrene;

[0179] Cyclopentyl acrylate 14 grams;

[0180] Ethyltrimethoxysilyl methacrylate 7 g.

[0181] The preparation method is: in a 1000ml three-neck flask equipped with an electric stirrer, condenser, thermometer, temperature controller, heating mantle and nitrogen inlet, add 160 grams of p-acetoxystyrene and 10 grams of p-tert-butylstyrene , 14 grams of cyclopentyl acrylate, 7 grams of ethyltrimethoxysilane methacrylate, 500 grams of tetrahydrofuran, nitrogen gas flow for 10 minutes under stirring, then heated to 60 ~ 70 ° C, added azobisisobutyronitrile (AIBN ) 11 grams of solution in 100 grams of tetrahydrofuran, after continuing to reflux for 8-18 hours, add 4.2 sodium ethylate, add ...

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Abstract

A deep ultraviolet negative photo resist and its film forming resin is prepared as forming a new film forming resin by leading acrylic ester coupler containing silicon into normal film forming preparation using PHS as base, copolymerizing said acrylic ester containing silicon with materials in said preparation to obtain a new type of film forming resin; then preparing deep ultraviolet negative photoresist by obtained new type of film forming resin, photo acid, cross linker, solvent and additives .

Description

technical field [0001] The present invention relates to a kind of copolymer film-forming resin (also known as "film-forming agent") containing silicon coupling agent and the deep-ultraviolet light for using KrF laser (248nm) as exposure light source formulated by using this film-forming resin (DUV) negative-tone chemically amplified photoresist composition. Background technique [0002] Photoresists are key functional materials for photolithography processes in the large-scale integrated circuit industry. Among them, the film-forming resin is an important part of the photoresist, and its chemical and physical properties directly affect the use effect of the photoresist in the large-scale integrated circuit industry. [0003] According to different photoresist processes, photoresists are divided into two categories: positive photoresist and negative photoresist. The so-called positive photoresist means that on the photoresist film during the photolithography process, the ex...

Claims

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Application Information

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IPC IPC(8): G03F7/033G03F7/004
Inventor 冉瑞成沈吉庄学军
Owner 苏州市成技新材料开发有限公司
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