Ion injectivity optimizing method for photovoltaic infrared detector tellerium-cadmium-mercury materials
An infrared detector and ion implantation technology, which is applied in semiconductor/solid-state device testing/measurement, semiconductor devices, sustainable manufacturing/processing, etc., can solve the problems of time and energy, high test cost, and incomparability, and achieve Save time and effort, lower test costs, and improve comparability
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[0019] It is now described in conjunction with the accompanying drawings:
[0020] figure 1 It is the base material under test (MCT) sample, the sample is square, the surface layer of the base material of the sample is peeled off to expose a fresh mercury cadmium telluride layer 1, and then a layer of ZnS is evaporated as a barrier layer 2 for ion implantation, and in On the barrier layer, the implantation regions 3 of rows VIII and columns VIII, rows I-VIII in the horizontal direction and columns I-VIII in the vertical direction are regularly photoetched.
[0021] Such as figure 2 As shown in Figure A, the hollow area 5 carved out by the mask plate 4 is a horizontal rectangle and is located at the lower part of the mask plate, corresponding to figure 1 Rows V-VIII in the figure; Figure B shows that the hollow area 5 formed by the mask plate 4 is a vertical rectangle and is located on the right side of the mask plate, corresponding to figure 1 V-VIII columns in the figure;...
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