Method for preparing high performance mercury cadmium telluride p-n junction by ion injection

Abstract

The invention relates to a method for preparing a high-performance mercury cadmium telluride p-n junction through ion injection. The method comprises the following steps: adopting an identical mercury cadmium telluride film as a substrate; manufacturing a plurality of mask plates; evaporating a ZnS film as blocking layers for ion injection; photo etching a corresponding ion injection region on the blocking layers to inject; and then finishing the junction process of the p-n junction. The blocking layers for the ion injection are ZnS film blocking layers with different thickness obtained through a plurality of superposition and evaporation; the ion injection dosage is the dosage of an identical ion and identical injection energy value after being optimized. The invention obtains a serial testing unit for superposing and evaporating the blocking layers with different thickness obtained on identical backing material; the process improvement of the ion injection is conducted to a photo etching entrance and exit area according to the ion injection dosage after being optimized at a time, so as to prepare the high-performance mercury cadmium telluride p-n junction and provide more convenient and quicker experimental investigation on optimizing process parameters for a solar infrared detector. The invention has the advantages of low testing cost, and time and energy conservation; and the method can be popularized and applied to the optimization study on the thickness of the ion injection blocking layer in other backing material system.

Description

technical field The invention relates to an optimization research technology for the preparation process parameters of an infrared detector, in particular to a method for preparing a high-performance mercury cadmium telluride p-n junction by ion implantation of a photovoltaic infrared detector. technical background The key to optimizing the performance of photovoltaic infrared detectors based on mercury cadmium telluride (MCT) thin film materials is to prepare high-performance mercury cadmium telluride p-n junctions. Due to the high absorption coefficient and high quantum efficiency of the mercury cadmium telluride thin film, in the ternary alloy system of MCT, different band gaps can be obtained by adjusting the cadmium component value. An important material for the preparation of infrared detectors. The performance of photovoltaic infrared detectors depends on the zero bias resistance of the device unit (R 0 ) value and the product of the p-n junction area (A) of the det...

AI Technical Summary

Problems solved by technology

However, this method has obvious disadvantages

The patented technology "Optimization Method for Ion Implantation Dose of HgCdTe Materials for Photovoltaic Infrared Detectors" (ZL 200510122955.5) overcomes the high cost of testing, the need to consume a lot of time and energy, and the fact that different batches of preparations exist in the above conventional technical means. The material difference of different parameters affects the unit test results of different parameter series, resulting in defects such as poor comparability, and also significantly improves the test efficiency by dozens of times

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