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High-power quick soft-restoring diode and mfg technology thereof

A production process and soft recovery technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of hard reverse recovery characteristics, no high-power fast soft-recovery diode manufacturing process, and it is difficult to solve high-power fast recovery diodes. Soft recovery diode forward voltage drop, reverse recovery characteristics and high power problems, to achieve the effect of soft reverse recovery characteristics

Inactive Publication Date: 2005-12-21
北京京仪椿树整流器有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (1) PN structure fast recovery diode, the power is easy to increase, but the forward voltage drop is generally relatively large, and the reverse recovery time is relatively long; PIN structure fast recovery diode, the power is small, and the reverse recovery characteristic is relatively hard
[0006] (2) The existing technology is difficult to solve the contradiction between the forward voltage drop, reverse recovery characteristics and high power of high-power fast soft recovery diodes, and the product cannot meet high-frequency, fast and high-power occasions, which limits fast thyristors, Application of high-power high-frequency devices such as GTO, IGCT and IGBT
[0007] (3) There is no domestic report on the manufacturing technology of high-power fast soft recovery diodes, no high-power fast soft recovery diode manufacturing process, no high-power fast soft recovery diode structure

Method used

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  • High-power quick soft-restoring diode and mfg technology thereof
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Preparation of P + PINN + Type high power fast soft recovery diode:

[0049] 1).Primary diffusion (closed expansion): clean the original silicon wafer, 1200 ℃ diffusion furnace constant temperature diffusion, using 99.9999% pure home source diffusion, the surface concentration is 10 17 / cm 3 ;

[0050] 2). Remove P-type on one side: Use a grinder to grind off one side of the P-type diffuser;

[0051] 3). Phosphorus deposition: clean and remove the diffusion sheet on one side, diffuse at a constant temperature in a 1000°C diffusion furnace, and use a liquid source of phosphorus oxychloride (POCl 3 ) diffusion, the surface concentration is ≥1×10 19 / cm 3 ;

[0052] 4). Dephosphorization of P surface: use a screen printing machine to print the P-shaped surface, and corrode the phosphorus on the P-shaped surface;

[0053] 5). Phosphorus propulsion: clean the diffusion sheet, and propel it at a constant temperature in a 1200°C diffusion furnace;

[0054] 6). Diffusi...

Embodiment 2

[0079] Preparation of P + PINN + Type high power fast soft recovery diode:

[0080] 1).Primary diffusion (closed expansion): clean the original silicon wafer, 1250 ℃ diffusion furnace constant temperature diffusion, using 99.9999% pure home source diffusion, the surface concentration is 10 18 / cm 3 ;

[0081] 2). Remove P-type on one side: Use a grinder to grind off one side of the P-type diffuser;

[0082] 3). Phosphorus deposition: clean and remove the diffusion sheet on one side, diffuse at a constant temperature in a 1150°C diffusion furnace, and use a liquid source of phosphorus oxychloride (POCl 3 ) diffusion, the surface concentration is ≥9×10 19 / cm 3 ;

[0083] 4). Dephosphorization of P surface: use a screen printing machine to print the P-shaped surface, and corrode the phosphorus on the P-shaped surface;

[0084] 5). Phosphorus propulsion: clean the diffusion sheet, and propel it at a constant temperature in a 1250°C diffusion furnace;

[0085] 6). Diffusi...

Embodiment 3

[0110] Preparation of P + PINN + Type high power fast soft recovery diode:

[0111] 1).Primary diffusion (closed expansion): clean the original silicon wafer, 1230 ℃ diffusion furnace constant temperature diffusion, using 99.9999% pure home source diffusion, the surface concentration is 10 18 / cm 3 ;

[0112] 2). Remove P-type on one side: Use a grinder to grind off one side of the P-type diffuser;

[0113] 3). Phosphorus deposition: clean and remove the diffusion sheet on one side, diffuse at a constant temperature in a 1100°C diffusion furnace, and use a liquid source of phosphorus oxychloride (POCl 3 ) diffusion, the surface concentration is ≥5×10 19 / cm 3 ;

[0114] 4). Dephosphorization of P surface: use a screen printing machine to print the P-shaped surface, and corrode the phosphorus on the P-shaped surface;

[0115] 5). Phosphorus propulsion: clean the diffusion sheet, and propel at a constant temperature of 1230°C diffusion furnace;

[0116] 6). Diffusion of...

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Abstract

The disclosed diode is as key part in semiconductor converter assembly of electric power. Structure of silicon chip is in P+PINN+ structure. In order to solve contradiction between forward voltage drop / backward recovery characteristic of diode and large power, following manufacturing steps are added: diffusion of paper source, oxidation, expansion of platinum on silicon chip, electron irradiation for chip etc. Thus, quick and soft backward recovery characteristic of the diode meets requirements of support devices in reverse parallel, absorption, follow current of high frequency arts in high-power such as fast thyristor, GTO, IGCT and IGBT. Power supply unit made from the disclosed diode is widely applicable to steel, petrochemical, electric power, railway and communication industries.

Description

technical field [0001] The invention relates to a high-power fast soft-recovery diode, a key component of a power semiconductor converter, and a production process thereof. The power supply device composed of the diode is widely used in steel, petrochemical, electric power, railway, and communication industries. Background technique [0002] At present, the key components used in power semiconductor converters are high-power fast recovery diodes, which include PN type and PIN type. [0003] Manufacturing process: one-time diffusion, single-sided P-type removal, phosphorus deposition, P-side dephosphorization, phosphorus advancement, round cutting, sintering, evaporation, corner grinding, corrosion protection, mid-test, electron irradiation, packaging, testing. [0004] Problems existing in the prior art: [0005] (1) PN type structure fast recovery diode, the power is easy to increase, but the forward voltage drop is generally relatively large, and the reverse recovery time...

Claims

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Application Information

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IPC IPC(8): H01L21/329
Inventor 黄耀先李玉柱李善谟
Owner 北京京仪椿树整流器有限责任公司
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