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Etching solution for silver alloy

A technology of silver alloy and etching solution, which is applied in the field of etching solution, and can solve the problems of not having, not widely using chip or panel yellowing process, low resistance value, etc.

Inactive Publication Date: 2005-11-16
RITDISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, although the resistance value of silver alloys containing more than 80% silver is not as low as that of silver metal, its resistance value is much lower than that of chromium metal.
However, because silver alloys do not have appropriate etchant, they are not widely used in the yellowing process of wafers or panels

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-8

[0057] Prepare a solution of hydrogen peroxide and nitric acid according to the ratio in Table 1 below, and add water to 100 grams to prepare an etching solution with the following concentration. A silicon substrate with a silver alloy thin film is coated with a photoresist layer by spin coating; wherein the silver alloy thin film is formed on the silicon substrate by sputtering, and contains more than 98% silver, 0.9% Palladium and more than 1.0% copper. Subsequently, the silicon substrate was exposed to form a patterned photoresist layer; the silicon substrate was then coated or immersed in the etching solution configured according to Table 1, and the etching rate was measured. The results are shown in Table 1 below.

[0058] Example

[0059] After the etching was completed, the silicon substrate was inspected to find that the silicon substrate and the patterned photoresist were not damaged. Therefore, the etchant only selectively etches the silver alloy.

Embodiment 9-23

[0061] Prepare a solution of hydrogen peroxide and sulfuric acid according to the ratio in Table 2 below, and add water to 100 grams to prepare an etching solution with the following concentration. A silicon substrate with a silver alloy film is coated with a photoresist layer by spin coating; wherein the silver alloy film is formed on the silicon substrate by sputtering, and contains more than 98% silver, 0.9 % palladium and more than 1.0% copper. Subsequently, the silicon substrate was exposed to form a patterned photoresist layer; the silicon substrate was then coated or immersed in the etching solution configured according to Table 2, and the etching rate was measured. The results are shown in Table 2 below.

[0062] Example

[0063] After the etching was completed, the silicon substrate was inspected to find that the silicon substrate and the patterned photoresist were not damaged. Therefore, the etchant only selectively etches the silver alloy.

Embodiment 24-32

[0065] Prepare a solution of hydrogen peroxide, sulfuric acid, and ammonium acetate according to the ratio in Table 3 below, and add water to 100 grams to prepare an etching solution with the following concentration. A silicon substrate with a silver alloy thin film is coated with a photoresist layer by spin coating; wherein the silver alloy thin film is formed on the silicon substrate by sputtering, and contains more than 98% silver, 0.9% Palladium and more than 1.0% copper. Subsequently, the silicon substrate was exposed to form a patterned photoresist layer; the silicon substrate was then coated or immersed in the etching solution configured according to Table 3, and the etching rate was measured. The results are shown in Table 3 below.

[0066] Example

[0067] After the etching was completed, the silicon substrate was inspected to find that the silicon substrate and the patterned photoresist were not damaged. Therefore, the etchant only selectively etches the s...

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PUM

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Abstract

An etching liquid for silver alloy contains proportionally hydrogen peroxide, ammonium compound or one of sulfuric acid, nitric acid and organic acid, and water. The etched silver alloy is also disclosed.

Description

[0001] This application is a divisional application of 03147828.X (silver alloy etching solution) [0002] The filing date of the earlier application is: 2003.6.25 [0003] The applicant of this earlier application is Rhenium Technology Co., Ltd. technical field [0004] The invention relates to an etching solution, especially an etching solution suitable for silver alloys. Background technique [0005] Current flat panel display devices, especially organic electroluminescence displays, mostly use chromium metal as the material of wires. But because of the high resistance of chromium metal, researchers have been seeking to use metals with lower resistance as wire materials. In the past, it was proposed to use silver as the wire material of flat-panel display devices, but it has not been widely used because there is no suitable and stable etchant composition. [0006] In recent years, in order to improve the performance of the flat panel display device, researchers still f...

Claims

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Application Information

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IPC IPC(8): C23F1/14
Inventor 李旭峰姚信字邹忠哲施明忠叶添升吴朝钦
Owner RITDISPLAY
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