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Etching method of MXene material

A technology of chalcogen and nitrogen, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., to achieve the effect of promoting functional applications and large-scale preparation, and the preparation method is simple and efficient

Pending Publication Date: 2022-04-29
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the main challenges in the synthesis of MXenes are: (1) to explore green and harmless synthesis routes; (2) to explore new etching routes to achieve the etching of MAX phase precursors with different A sites, such as Ga, In and Sn; ( 3) Explore new MXene end group modification methods

Method used

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  • Etching method of MXene material
  • Etching method of MXene material
  • Etching method of MXene material

Examples

Experimental program
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Effect test

Embodiment 1

[0021] Embodiment 1: Preparation of MXene Ta 2 CSe powder

[0022] (1) Weigh Ta with a particle size of 500 mesh with a molar ratio of 1:1:5 2 AlC powder, NiSe powder, and LiCl are ground and mixed to obtain a mixture.

[0023] (2) Put the mixture into an alumina crucible, and then put it into a high-temperature vacuum tube furnace for reaction. The reaction conditions are: reaction temperature 650°C, holding time 5h, inert atmosphere protection. After the sintering temperature dropped to room temperature, the reaction product in the alumina crucible was taken out.

[0024] (3) Washing the reaction product with deionized water and alcohol: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes to wash off the remaining salt in the reaction product, and then carry out suction filtration. Put the reaction product obtained by suction filtration into an oven at 40° C., take it out after 12 hours, and obtain a powder product. fi...

Embodiment 2

[0025] Embodiment 2: Preparation of MXene Nb 2 CTe powder

[0026] (1) Weigh Nb with a molar ratio of 1:1:6:6 and a particle size of 500 mesh 2 AlC powder, Te powder, NaCl and KCl are ground and mixed to obtain a mixture.

[0027] (2) Put the mixture into an alumina crucible, and then put it into a high-temperature vacuum tube furnace for reaction. The reaction conditions are: reaction temperature 700°C, holding time 12h, inert atmosphere protection. After the sintering temperature dropped to room temperature, the reaction product in the alumina crucible was taken out.

[0028] (3) Washing the reaction product with deionized water and alcohol: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes to wash off the remaining salt in the reaction product, and then carry out suction filtration. Put the reaction product obtained by suction filtration into an oven at 40° C., take it out after 12 hours, and obtain a powder product....

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Abstract

The invention belongs to the technical field of two-dimensional nano materials, and particularly relates to an etching method of an MXene material. The invention relates to an etching method of an MXene material, which comprises the following steps: mixing a precursor MAX phase material, chalcogenide or nitrogen elementary substance element powder or related alloy phase thereof and inorganic salt, and reacting at high temperature. The method disclosed by the invention is simple, efficient and environment-friendly, multiple defects caused by using a hydrofluoric acid (HF) solution with high toxicity and high risk as an etching agent to prepare MXene are avoided, chemical modification of the surface of the MXene material is realized, physical and chemical properties of the MXene material can be effectively regulated and controlled through end group modification, and functional application and large-scale preparation of MXene are expected to be further promoted.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional nanometer materials, and in particular relates to an etching method for MXene materials. Background technique [0002] Two-dimensional (2D) transition metal carbides or carbonitrides (MXenes) are one of the newest members in the family of 2D materials. MXenes are prepared by selectively etching the A-layer elements of the MAX-phase precursor, where M represents early transition metal elements (Ti, V, Nb, etc.), and A is an element mainly from group 13-16 (Al, Si, etc.), X is carbon and / or nitrogen1. The general formula for MXenes can be written as M n+1 x n T x (n=1-3), wherein Tx represents a surface end group, which is generally considered to be -F, -O or -OH. Owing to their unique two-dimensional layered structure, hydrophilic surface, and metallic conductivity, MXenes show promise for a wide range of applications, especially for electrochemical energy storage. Following the first...

Claims

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Application Information

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IPC IPC(8): C01B19/00
CPCC01B19/002C01P2002/72C01P2004/04
Inventor 黄庆丁浩明李友兵
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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