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Dual-vertical spin valve

A spin-valve, double-perpendicular technology, used in magnetic recording heads, instruments, measuring devices, etc., can solve the problems of loss of stored information, limit the development of high-level information storage technology, etc. Effect

Inactive Publication Date: 2007-01-31
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Nevertheless, the easy axis directions of the magnetic anisotropy of the CPP-SPV thin film materials with the usual structure are all parallel to the film surface. When the component is submicron or even smaller, it will bring a series of problems: magnetization curling (magnetization curling) appears at the edge of the film, which leads to vortex magnetization of the film (Vortex magnetization), and the appearance of eddy current magnetic domain structure
If it is used as a device, it will lead to the loss of stored information, thus limiting the further development of high information storage technology

Method used

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  • Dual-vertical spin valve

Examples

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Effect test

Embodiment 1

[0015] Example 1: Two kinds of spin valve materials were prepared by using a magnetron sputtering apparatus: one of them is a common spin valve structure, and its multilayer film is metal tantalum (6nm) / nickel-iron alloy (7nm) from the bottom to the top. / metal copper (2.6nm) / nickel-iron alloy (4nm) / iron-manganese alloy (15nm) / metal tantalum (6nm) (the data in brackets is the thickness of the film, nm means nanometer), which is characterized by the current parallel to the plane configuration, And the magnetic anisotropy easy axis is parallel to the film surface; the other is the double vertical spin valve structure of the present invention, which is platinum metal (6nm) / [cobalt metal (0.4nm) / platinum metal (2nm)]5 / cobalt metal (0.8nm) / metallic copper (3nm) / Co(0.8nm)[Pt(2nm) / Co(0.4nm)]5 / FeMn(15nm) / Pt(2nm) (the subscript number is the number of repeated layers of the composite structure ), which is characterized by the current perpendicular to the plane configuration and the eas...

Embodiment 2

[0016] Example 2: Ten kinds of double vertical spin valve devices with structures were experimentally prepared, and the structures are shown in the following table:

[0017]

[0018] The present invention uses plasma sputtering, magnetron sputtering and molecular beam epitaxy to prepare a total of 30 double vertical spin valve devices with the above ten structures, and the size of the devices is 300 nanometers × 300 nanometers . Through testing, it is found that the magnetoresistance effect of all these spin valves at room temperature is more than 30% higher than that of spin valves with conventional structures. Magnetic force microscopy tests revealed that these dual vertical spin-valve devices all exhibit good single magnetic domain characteristics.

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Abstract

The invention relates to a method to make dual-vertical self-rotating valve and the structure. It adopts glass and mono-crystalline silicon substrate, and by the method of plasma sputtering, magnetism control sputtering or molecular beam epitaxial growth, to make the metal multi-velum structure. By the step of photographic process, electron beam printing or ion etching, two electrodes would be made at the top and the bottom of the metal multi-velum. While the self-rotating valve working, the flowing direction of signal flow is perpendicular to the surface of the metal multi-velum. The advantage of the invention is combining the two features of current vertical velum flat and the magnetism anisotropy easy axis vertical velum to sharply increase the magneto resistor effect of self-rotating valve. And the magneto homogeneity is effectively improved.

Description

technical field [0001] The invention belongs to the technical field of magnetic storage, and in particular provides a method for preparing a double vertical spin valve and its structure. The spin valve is used as a read head of a computer hard disk, or in devices such as magnetic random access memories, sensors, and the like. technical background [0002] The current era is the information age, and the information exchange of various industries puts forward higher and higher requirements for the storage density and stability of information. In the past ten years, information storage technology, especially magnetic recording technology, has developed rapidly. In particular, the magnetic head made of giant magnetoresistance spin valve thin film material has greatly improved the areal recording density of hard disks. At present, the laboratory longitudinal magnetic recording density has reached 150Gb / in 2 , and towards the next goal of 1Tb / in 2 March. At present, the read h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B5/39G01R33/09
Inventor 于广华姜勇腾蛟王立锦张辉朱逢吾
Owner UNIV OF SCI & TECH BEIJING
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