Manufacturing method and device of silicon-based planar triode device
A manufacturing method and planar technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve difficult, high, or even a dozen Tesla and other problems, and achieve the effect of high magnetoresistance effect
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[0032] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
[0033] A method for manufacturing a silicon-based planar triode device, comprising the step of doping boron ions and phosphorous ions respectively on the upper surface and the lower surface of a wafer, thereby forming a planar triode with a structure of p + - n - n +.
[0034] The steps of forming a planar triode with a structure of p + - n - n + specifically include:
[0035] Step 1, using MEMS to dope n-type particles in the wafer to increase the surface resistivity of the wafer;
[0036] Step 2, treating the wafer doped with n-type particles at high temperature in an oxidation furnace to form an oxide layer on the surface of the wafer;
[0037] Step 3, using a p...
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