Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method and device of silicon-based planar triode device

A manufacturing method and planar technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve difficult, high, or even a dozen Tesla and other problems, and achieve the effect of high magnetoresistance effect

Inactive Publication Date: 2019-03-05
LANZHOU UNIVERSITY
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the Lorentz force can be used to control the transport properties of semiconductor devices by magnetic fields, it is much more difficult to achieve magnetic manipulation in semiconductor materials than in magnetic materials because it is usually canceled by the Hall electric field.
[0004] At present, people are starting from narrow-band semiconductors (Ag 2 Te, InSb, etc.) to traditional semiconductors (Si, Ge, etc.) have reported large magnetoresistance effects that are much larger than current magnetic materials, but it is not difficult to see that people use Lorentz force to manipulate charges in essence, so the required The working magnetic field is usually very high, and it takes several or even more than ten tesla to obtain considerable effects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method and device of silicon-based planar triode device
  • Manufacturing method and device of silicon-based planar triode device
  • Manufacturing method and device of silicon-based planar triode device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0033] A method for manufacturing a silicon-based planar triode device, comprising the step of doping boron ions and phosphorous ions respectively on the upper surface and the lower surface of a wafer, thereby forming a planar triode with a structure of p + - n - n +.

[0034] The steps of forming a planar triode with a structure of p + - n - n + specifically include:

[0035] Step 1, using MEMS to dope n-type particles in the wafer to increase the surface resistivity of the wafer;

[0036] Step 2, treating the wafer doped with n-type particles at high temperature in an oxidation furnace to form an oxide layer on the surface of the wafer;

[0037] Step 3, using a p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a silicon-based planar transistor device manufacturing method and a device. The silicon-based planar transistor device manufacturing method comprises a step in which boron ions and phosphorus ions are doped respectively on the upper surface and the lower surface of a wafer, and thus, a planar transistor with a p+-n-n+ structure is formed. The invention also discloses a basic principle and an idea by using the silicon-based planar transistor device to acquire large magnetoresistance effects in a low magnetic field.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for manufacturing a silicon-based planar triode device and the device, so as to achieve a large magnetoresistance effect under a low magnetic field. Background technique [0002] In the past 50 years, the development of the world's semiconductor industry has been following the famous Moore's Law, that is, the number of transistors on a chip doubles every 18 to 24 months. However, due to the limitation of physical volume, according to Moore's Law, the development of the semiconductor industry will approach the limit in the next ten years, and the performance of traditional transistor circuits cannot be further improved. How to make semiconductor devices surpass the limitation of Moore's Law has become an important problem to be solved urgently in the semiconductor industry today. [0003] Realizing the magnetic regulation of semiconductor devices not only endows traditional...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L29/73
CPCH01L29/66234H01L29/73
Inventor 隋文波杨德政薛德胜司明苏
Owner LANZHOU UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products