INP wafer thinning and polishing process method

Abstract

The invention relates to an INP wafer thinning and polishing process method which comprises the following steps: (1) waxing and bonding a wafer with photoresist, and thinning the wafer to 120-125 microns on thinning equipment; (2) the wafer is taken down from the thinning device and placed on a polishing device, and the wafer makes contact with a polishing pad on a polishing disc; (3) polishing is conducted for 10 min to 20 min, and the wafer is polished to 80 micrometers to 100 micrometers; the polishing solution is controlled to be discharged continuously in the polishing process, the polishing temperature is 23-27 DEG C, and the polishing pressure is 180-300 g / cm < 2 >; (4) cleaning and blow-drying the wafer, and then melting wax and discharging the wafer; (5) carrying out primary metal coating on the N surface; and (6) annealing, and then scribing cracking strips. The method is favorable for improving the product performance and obtaining a high-quality chip.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to an INP sheet thinning and polishing process method. Background technique [0002] When the INP wafer is processed to the thinning process, the backside substrate is ground to remove a certain thickness of material, which effectively reduces the volume of the chip package and meets the requirements of heat dissipation and size. After thinning, the thickness is required to be between 100~120um, and the film is unloaded, and then the N-side primary metal coating, the N-side alloy, and the N-side secondary metal coating are respectively performed. However, the existing technology has the following problems: 1) Mechanical damage is caused after thinning, and the back of the wafer is rough; 2) For high-speed laser products, the passivation layer is thick and the heat dissipation is poor. It cannot be improved after alloying; 3) High-speed laser products...

AI Technical Summary

Problems solved by technology

However, the existing technology has the following problems: 1) Mechanical damage is caused after thinning, and the back of the wafer is rough; 2) High-speed laser products have a thick passivation layer and poor heat dissipation, and wafers will warp to varying degrees after thinning. 3) High-speed laser products need to be thinned to 80-100um, but it is difficult to meet the requirements simply by thinning, and it is easy to crack; 4) N-side metal cannot be operated at one time, and the processing cost is high

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