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Reworking method for poor back surface of lithium niobate single-sided polished wafer

A single-side polishing and lithium niobate technology, which is applied in the direction of sustainable manufacturing/processing, climate sustainability, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the bad rework of lithium niobate single-side polished sheets method, lithium niobate single-sided polishing sheet scratches, thin thickness, etc., to achieve the effect of improving rework yield, less rework removal, and high flatness

Active Publication Date: 2022-07-01
TDG HLDG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical scheme adopted by the present invention to solve the problems of back defects such as scratches, spots, dirt, and thin thickness on the back of lithium niobate single-sided polished sheets is: a method for reworking the back of lithium niobate single-sided polished sheets. See flow chart figure 1 , including the following steps:

Method used

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  • Reworking method for poor back surface of lithium niobate single-sided polished wafer
  • Reworking method for poor back surface of lithium niobate single-sided polished wafer
  • Reworking method for poor back surface of lithium niobate single-sided polished wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] a) Test the single-sided polished lithium niobate sheet under a yellow strong light with a brightness of 1000 Lux, and measure the thickness of the wafer with defective backside to obtain a defective backside sheet of lithium tantalate with the same thickness;

[0039] b) Put the wafers whose backside defects are detected into alkaline cleaning solutions with concentrations of 10%, 5%, and 3.3% in turn, and carry out ultrasonic cleaning at ultrasonic powers of 28 kHz, 40 kHz, and 200 kHz in turn, and the cleaning temperature is 35 ° C. The cleaning time is 40 minutes in total, which reduces the particle contamination on the surface of the wafer and reduces the rate of subsequent processing splits;

[0040] c) Put the cleaned wafer into the laminating machine, use a 80μm PET composite film, the film tension is -100Mpa, the blade cutting temperature is 70°C, and the blade cuts the film along the reference edge of the wafer at a cutting speed of 2000pps, respectively. Cut ...

Embodiment 2

[0045] a) with embodiment 1;

[0046] b) with embodiment 1;

[0047] c) Put the cleaned wafer into the laminating machine, use a PET composite film with a thickness of 125μm, the film tension is -100Mpa, the blade cutting temperature is 70°C, and the blade cuts the film along the reference edge of the wafer at a cutting speed of 2000pps, respectively. Cut along the arc position of the wafer at a speed of 3500pps to obtain a wafer with a polished surface;

[0048] d) with embodiment 1;

[0049] e) with embodiment 1;

[0050] f) Same as Example 1, obtain reworked lithium niobate single-sided polishing sheet, diameter 100.00mm, thickness 241.8μm, backside roughness 0.18μm, flatness 1.36μm, input 140 pieces, output 138 pieces, the backside is scratched 2 pieces, yield 98.57%.

Embodiment 3

[0052] a) with embodiment 1;

[0053] b) with embodiment 1;

[0054] c) Put the cleaned wafer into the laminating machine, use a PET composite film with a thickness of 200μm, the film tension is -100Mpa, the blade cutting temperature is 70°C, and the blade cuts the film along the reference edge of the wafer at a cutting speed of 2000pps, respectively. Cut along the arc position of the wafer at a speed of 3500pps to obtain a wafer with a polished surface;

[0055] d) with embodiment 1;

[0056] e) with embodiment 1;

[0057] f) Same as Example 1, obtain reworked lithium niobate single-sided polishing sheet, the diameter is 100.00 mm, the thickness is 242.6 μm, the back surface roughness is 0.18 μm, and the flatness is 2.16 μm, 140 pieces were input, and 131 pieces were output , 12 pieces with poor flatness, 3 pieces with scratches on the back, and the yield rate is 93.57%.

[0058] Comparative Examples 1, 2 and 3, as shown in Table 1, the thinner the PET composite film, the...

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Abstract

The invention discloses a method for reworking a lithium niobate single-sided polished wafer with a poor back surface, which comprises the following steps of: inspecting the lithium niobate single-sided polished wafer, and marking the wafer with the poor back surface; putting the marked wafer into an alkaline cleaning solution for ultrasonic cleaning; pasting a film on the polished surface of the cleaned wafer; adhering the film adhering surfaces of the two wafers after film adhering to obtain an adhered workpiece; carrying out double-sided grinding on the bonded workpiece; and the ground bonding workpiece is cleaned and demoulded. Through process improvement, the product yield is improved, the reworked single-sided polished wafer has the advantages of being good in back roughness consistency, high in flatness index, high in machining efficiency, low in production cost, easy in process implementation, easy to monitor and the like, and the requirements of industrial large-scale batch production can be met.

Description

technical field [0001] The invention relates to a lithium niobate crystal material, in particular to a method for reworking the bad back of a lithium niobate single-sided polishing sheet, which improves the rework quality and processing efficiency of the bad back of the lithium niobate single-sided polishing sheet, and is beneficial to saving production costs. Suitable for industrial promotion. Background technique [0002] Lithium niobate (LiNbO 3 , hereinafter referred to as LN) is a chemical substance, belonging to the trigonal system, ilmenite type (distorted perovskite type) structure, the relative density of 4.30g / cm 3 , Mohs hardness 5, Curie point 1140 ℃, is a multifunctional material integrating piezoelectric, ferroelectric, pyroelectric, nonlinear, photoelectric, photoelastic, photorefractive and other functions. Because of its excellent physical properties, LN has received more and more attention and has been widely used in aviation, aerospace, civil optoelectro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/337H01L21/683H10N30/086
CPCH01L21/6835H01L2221/68327H10N30/086Y02P70/50
Inventor 徐秋峰濮思麒沈浩张忠伟钱煜张伟明汪万盾曹焕
Owner TDG HLDG CO LTD
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