Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cutting fluid for thin-sheet and large-size solar-grade silicon wafer

A solar-grade silicon wafer, thinning technology, applied in lubricating compositions, petroleum industry, etc., can solve the problem that the yield of silicon wafers is difficult to meet the production target demand value of slicing enterprises, the cutting seam is difficult to wet, and the silicon powder is dispersed. Difficulties and other problems, to achieve excellent dynamic and static wetting performance, good wetting efficiency, and reduce the breakage rate of diamond wire

Active Publication Date: 2022-05-13
GUANGDONG GOKIN SOLAR ENERGY TECH CO LTD +1
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the silicon wafer cutting fluids used in the market cannot well adapt to the cutting process of large-sized silicon wafers, thin slices, and thin diamond wires. The edge chipping and bright edges caused by the decrease of wetting performance on the rubber surface make it difficult for the silicon wafer yield to meet the production target demand value of the slicing enterprise
Therefore, cutting fluid has become a bottleneck restricting the development of the silicon wafer cutting industry, which restricts the development of lower cost diamond wire thinning and large-size silicon wafer thinning.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cutting fluid for thin-sheet and large-size solar-grade silicon wafer
  • Cutting fluid for thin-sheet and large-size solar-grade silicon wafer
  • Cutting fluid for thin-sheet and large-size solar-grade silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A cutting fluid for thinning and thinning large-scale solar-grade silicon wafers, comprising the following components in parts by weight:

[0038] Dispersant 30 parts

[0039] Wetting agent 10 parts

[0040] 9 parts of ethylene glycol monohexyl ether

[0041] Pure water balance.

[0042] Wherein, the dispersant is cyclohexyl polyoxyethylene ether whose degree of polymerization n of polyoxyethylene ether is 12. The wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropylene ether, the polymerization degree m of the polyoxyethylene ether is 7, and the polymerization degree p of the polyoxypropylene ether is 4.

Embodiment 2

[0044] A cutting fluid for thinning and thinning large-scale solar-grade silicon wafers, comprising the following components in parts by weight:

[0045] Dispersant 39 parts

[0046] Wetting agent 14 parts

[0047] 8.5 parts of ethylene glycol monooctyl ether

[0048] Pure water balance.

[0049] Wherein, the dispersant is cyclohexyl polyoxyethylene ether whose degree of polymerization n of polyoxyethylene ether is 16. The wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropylene ether, the polymerization degree m of the polyoxyethylene ether is 6, and the polymerization degree p of the polyoxypropylene ether is 5.

Embodiment 3

[0051] A cutting fluid for thinning and thinning large-scale solar-grade silicon wafers, comprising the following components in parts by weight:

[0052] Dispersant 32.5 parts

[0053] Wetting agent 10.5 parts

[0054] 10 parts of triethylene glycol monohexyl ether

[0055] Pure water balance.

[0056] Wherein, the dispersant is cyclohexyl polyoxyethylene ether whose degree of polymerization n of polyoxyethylene ether is 20. The wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropylene ether, the polymerization degree m of the polyoxyethylene ether is 5, and the polymerization degree p of the polyoxypropylene ether is 4.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
degree of polymerizationaaaaaaaaaa
degree of polymerizationaaaaaaaaaa
degree of polymerizationaaaaaaaaaa
Login to View More

Abstract

The invention discloses a cutting fluid for a thin-sheet and large-size solar-grade silicon wafer, and belongs to the technical field of linear cutting processing in the photovoltaic industry. The cutting fluid consists of the following components in parts by weight: 25-40 parts of a dispersing agent, 8-15 parts of a wetting agent, 8-12 parts of a stabilizing agent and the balance of pure water, the total parts of the components are 100 parts. Wherein the dispersing agent is a polyether dispersing agent with a multi-branched structure, can provide more active adsorption sites, has higher dispersion efficiency on silicon powder, and has excellent wettability; the wetting agent is dialkynyl alcohol polyether with a symmetrical structure, and the wetting performance is higher than that of common isomeric alcohol ether, and the wetting efficiency is better. Through scientific cooperation of the dispersing agent and the wetting agent, the cutting fluid has excellent dispersion, dynamic wetting, static wetting, defoaming and other properties, the yield of silicon wafers can be effectively improved, and the stability of the cutting process is kept.

Description

technical field [0001] The invention relates to the technical field of wire-cutting processing in the photovoltaic industry, in particular to a cutting fluid for thinning and thinning large-size solar-grade silicon wafers. Background technique [0002] With the rapid development of the photovoltaic industry, lean production and cost reduction have become one of the main means for photovoltaic enterprises to survive in the fierce market environment. In recent years, large size and thinning have become the two main technical directions for reducing the cost of photovoltaic silicon wafers. Among them, thinning silicon wafers can effectively reduce the amount of silicon material per unit wattage, which is an important means to reduce costs and reduce the amount of silicon material used. At the same time, the thinning of diamond wire can effectively increase the yield rate of silicon wafers and reduce the waste of silicon materials, which is another important means to reduce cost...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C10M173/02C10N30/04C10N30/06C10N30/18
CPCC10M173/02C10N2030/04C10N2030/06C10N2030/18C10M2209/104C10M2209/105C10M2207/046
Inventor 付明全徐志群孙彬高大郭翔马伟萍毕喜行
Owner GUANGDONG GOKIN SOLAR ENERGY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products