Double-doped quantum dot active region epitaxial structure and preparation method and application thereof

Abstract

The invention discloses a double-doped quantum dot active region epitaxial structure and a preparation method and application thereof, a quantum dot active region of the double-doped quantum dot active region epitaxial structure is configured as a periodic double-doped quantum dot laminated structure, and the quantum dot active region comprises an n-type doped layer and a p-type doped layer which are periodically arranged; wherein the p-type doped layer and the n-type doped layer generate a synergistic effect, and the first interlayer is arranged between the n-type doped layer and the p-type doped layer which are periodically arranged; the second interlayer is arranged on the other side of the p-type doped layer, and the other side of the second interlayer is different from the side where the first interlayer is located; the first interlayer or the second interlayer is used for providing stress regulation or stress relief, and through a spatially separated alternate doping structure, the loss of current carriers is reduced, and the optical quality of the material is improved; the asymmetry of quasi-Fermi level movement of conduction bands and valence bands of the quantum dots is improved, and the peak gain and differential gain of the material are improved.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor technology, in particular to a dual-doped quantum dot active region epitaxial structure and a preparation method and application thereof. Background technique [0002] The optical communication system is an important infrastructure of the modern information society. With the continuous development of new services such as cloud computing, Internet of Everything, and virtual reality, the traffic of the optical communication system is increasing exponentially, and its power consumption is also increasing explosively. The semiconductor laser is the core component of the optical fiber communication system. The huge amount of data and power consumption put forward the demand for high speed, low power consumption and low cost. Because the size of quantum dot materials in three dimensions is close to the de Broglie wavelength of electrons, it has discrete energy levels similar to atoms, and ...

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Problems solved by technology

However, pure p-type doping usually reduces the occupation probability of electrons in the conduction band of quantum dots. At the same time, due to the introduction of additional holes in the valence band, the non-radiative recombination current (mainly Auger recombination) is increased, and the population inversion is improved. The threshold condition of the quantum dot laser is increased, and the threshold current of the quantum dot laser is increased. A higher threshold current means greater power consumption and higher heat, which is not good for reducing the power consumption of the device and maintaining the stability of the work.

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