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Alloy/magnetic insulator spin heterojunction and preparation method and application thereof

A heterojunction and insulator technology, which is applied to the parts of electromagnetic equipment, the manufacture/processing of electromagnetic devices, and the selection of materials, can solve the problems of thin film difficulties, high drive magnetization switching current density, etc., and achieve easy flipping and fast switching. Magnetic moment reversal operation, the effect of avoiding power consumption

Pending Publication Date: 2021-12-24
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the growth of TmIG thin films mostly adopts the method of pulsed laser deposition to adjust the stress on the thin film, thereby changing the anisotropy of the thin film. It is difficult to grow thin films with good out-of-plane perpendicular anisotropy by this method; The required current density is still higher

Method used

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  • Alloy/magnetic insulator spin heterojunction and preparation method and application thereof
  • Alloy/magnetic insulator spin heterojunction and preparation method and application thereof
  • Alloy/magnetic insulator spin heterojunction and preparation method and application thereof

Examples

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preparation example Construction

[0034] A method for preparing an alloy / magnetic insulator spin heterojunction device, comprising the following steps:

[0035] Step 1, cleaning the gadolinium gallium garnet substrate;

[0036] Step 2, using liquid phase epitaxy to grow a Bi:TmIG film on the surface of the gadolinium gallium garnet substrate cleaned in step 1;

[0037] Step 3, using the magnetron sputtering method to grow a germanium-bismuth-platinum alloy film on the surface of the Bi:TmIG film obtained in step 2 to obtain the desired alloy / magnetic insulator spin heterojunction.

Embodiment 1

[0039] A method for preparing an alloy / magnetic insulator spin heterojunction device based on GeBi:Pt / Bi:TmIG, wherein the thickness of the heavy metal layer germanium-bismuth-platinum alloy film is 10nm, and the thickness of the magnetic insulating layer Bi:TmIG film is 150nm , including the following steps:

[0040] Step 1. Clean the gadolinium gallium garnet substrate: select the single crystal gadolinium gallium garnet substrate with crystal orientation as the substrate, fix the substrate on the platinum support with platinum wire, and put it into trichlorethylene at 80°C Soak in the solution for 5 minutes, then wash in 80°C deionized water for 10 minutes; then put the substrate into 80°C potassium dichromate sulfuric acid solution for cleaning, and then put the substrate through two 80°C Rinse with deionized water; then soak the substrate in an alkali solution at 80°C (the solution is made of sodium phosphate, sodium carbonate, and potassium hydroxide in a mass ratio of ...

Embodiment 2

[0053] The heterojunction was prepared according to the steps of Example 1, only step 2 was adjusted so that the thickness of the magnetic insulating layer Bi:TmIG thin film was 750 nm, and other steps remained unchanged.

[0054] Among them, the thickness of the magnetic insulating layer is different, the coercive force is different, and the current required for the reversal is different.

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Abstract

The invention provides an alloy / magnetic insulator spin heterojunction and a preparation method and application thereof, which belong to the technical field of spin electronic devices. Gadolinium gallium garnet with the crystal orientation of <111> is used as a substrate, a high-quality Bi: TmIG thin film is grown on the surface of the substrate through a liquid phase epitaxy (LPE) method to serve as a magnetic insulation layer, then a germanium-bismuth-platinum alloy thin film is grown through a magnetron sputtering method to serve as a heavy metal layer, and then a GeBi: Pt / Bi: TmIG alloy / magnetic insulator spin heterojunction structure is formed. According to the structure, the conversion efficiency from charge current to spinning current is improved, the current density required by magnetization overturning is reduced, the power consumption is reduced, and faster magnetic moment overturning operation can be realized.

Description

technical field [0001] The invention belongs to the technical field of spin electronic devices, and in particular relates to an alloy / magnetic insulator spin heterojunction and a preparation method and application thereof. Background technique [0002] The development of spintronics has changed the history that only electron charges can be used to manufacture electronic devices, and provides another operational dimension besides electron charges, that is, manipulating electron spin, which provides the basis for the construction of new devices . In 1996, J.Slonczewski and L.Berger theoretically predicted the existence of the spin-transfer torque (STT) effect. When a spin-polarized current passes through a magnetic material, the spin electrons in the current will affect the electrons near the Fermi surface, changing the magnetization vector of the magnetic film. This discovery means that it is possible to directly manipulate the magnetic moment of magnetic materials with ele...

Claims

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Application Information

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IPC IPC(8): H01L43/02H01L43/10H01L43/12
CPCH10N50/80H10N50/01H10N50/85Y02P70/50
Inventor 张有禄张岱南邱孝鑫张怀武
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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