Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing silicon oxide based on silicon rod wire cutting waste

A technology of silicon oxide and wire cutting, applied in the field of silicon materials, achieves the effects of low cost, promotion of high-value utilization, and simple process

Pending Publication Date: 2021-12-21
LANZHOU UNIVERSITY
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no report on the method of preparing silicon oxide by wire-cutting silicon waste from silicon rods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] This embodiment provides a method for preparing silicon oxide based on silicon rod wire cutting waste, the steps are as follows:

[0038] (1) Get 1g of submicron flake silicon waste produced by wire cutting of silicon rods, pickle with a mixed acid solution containing 5% hydrofluoric acid and 10% hydrochloric acid, the pickling temperature is 50°C, and the time is 10h, and then use Repeated washing with deionized water 5 times, vacuum drying;

[0039] (2) Place the silicon powder obtained after drying in step (1) in a box-type furnace in an air atmosphere, calcining and oxidizing at 940° C., keeping it warm for 1 hour, and the heating rate is 5° C. for γ minutes;

[0040] (3) Place the silicon powder obtained by oxidation in step (2) in a tube furnace for a centering reaction, in an argon atmosphere, at a pressure of 20 bar, calcining at 1200°C, heat preservation for 50 hours, and a heating rate of 5°C / min. A silicon oxide material is obtained.

[0041] It has been de...

Embodiment 2

[0044] This embodiment provides a method for preparing silicon oxide based on silicon rod wire cutting waste, the steps are as follows:

[0045] (1) Take 1g of the submicron flake silicon waste produced by wire cutting of silicon rods, pickle with a mixed acid solution containing 5% hydrofluoric acid and 10% hydrochloric acid, the pickling temperature is 50°C, and the time is 5h, and then use Nitric acid pickling with a concentration of 10%, the pickling temperature is 20°C, and the time is 0.5h, then pickling with a mixed acid solution containing 5% hydrogen peroxide and 10% hydrochloric acid, the pickling temperature is 20°C, the time is 10h, and finally Repeatedly washed 6 times with deionized water and dried in vacuum;

[0046] (2) Place the silicon powder obtained after drying in step (1) in a tube furnace in an atmosphere containing 40% water and 60% oxygen, and calcine and oxidize at 1200° C., keep the temperature for 45 hours, and the heating rate is 1° C. / min. A sili...

Embodiment 3

[0050] This embodiment provides a method for preparing silicon oxide based on silicon rod wire cutting waste, the steps are as follows:

[0051] (1) Get 1g of submicron flake silicon waste produced by wire cutting of silicon rods, pickle with a mixed acid solution containing 5% hydrofluoric acid and 10% hydrochloric acid, the pickling temperature is 50°C, and the time is 5h, and then use Pickling with a mixed acid solution containing 5% hydrogen peroxide and 10% hydrochloric acid, the pickling temperature is 20°C, the pickling time is 10h, and finally washed 5 times with deionized water repeatedly, and vacuum dried;

[0052] (2) Place the silicon powder obtained after drying in step (1) in a tube furnace in an air atmosphere, calcining and oxidizing at 800°C, keeping it warm for 1 hour, and the heating rate is 5°C / min;

[0053] (3) Place the silicon powder obtained by oxidation in step (2) in a tube furnace for neutralization reaction, in an argon atmosphere, with a pressure o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for preparing silicon oxide based on silicon rod wire cutting waste, and relates to the field of silicon materials. According to the method, the silicon oxide material is directly obtained from the silicon waste material generated by silicon rod linear cutting through thermal oxidation (and neutralization reaction), evaporation and condensation processes are not needed, crushing and cracking are not needed, the technological process is simple, and the cost is low; by controlling the reaction conditions, the ratio of oxygen atoms to silicon atoms can be adjusted within the range of 0.16: 1-2: 1; the silicon oxide is prepared by fully utilizing the silicon waste generated by silicon rod linear cutting, and the silicon oxide is further applied to preparation of lithium ion batteries or quartz crucibles, so that high-value utilization of the silicon waste can be promoted.

Description

technical field [0001] The invention relates to the field of silicon materials, in particular to a method for preparing silicon oxide based on silicon rod wire cutting waste. Background technique [0002] With the development of solar cells, a large amount of submicron silicon waste is produced during the slicing process of crystalline silicon. The waste produced by the traditional mortar cutting process has a large amount of silicon carbide abrasive mixed in the sub-micron silicon waste, which is difficult to recycle. In recent years, diamond wire cutting technology has been popularized in the production of solar-grade silicon wafers, and the silicon content in silicon waste has increased significantly, bringing new opportunities for high-value applications of silicon waste. [0003] Due to its high lithium storage capacity of 4200mAh / g, silicon material has become a hot spot in the research of anode materials for next-generation lithium-ion batteries. At present, many st...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/113H01M4/48H01M10/0525C03C1/02C03B20/00
CPCC01B33/113H01M4/483H01M10/0525C03C1/02C03B20/00Y02E60/10
Inventor 刘德全闻震利贺德衍王晓哲韩昀钊
Owner LANZHOU UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com