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Preparation and application of silicon-based low-dielectric high-quality-factor microwave dielectric ceramic capable of being sintered at low temperature

A technology of microwave dielectric ceramics and high quality factor, which is applied in the field of dielectric ceramic materials, can solve the problems of few single-phase microwave dielectric ceramics, no microstructure, restrictions on low-temperature co-firing technology and the development of microwave multi-layer devices, and achieve synthetic raw materials The effect of low cost and high application value

Pending Publication Date: 2021-12-07
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the three performance indicators of microwave dielectric ceramics are mutually restrictive, there are very few single-phase microwave dielectric ceramics that meet the three performance requirements and can be sintered at low temperature.
At present, most of the research on microwave dielectric ceramics is a summary of experience obtained through a large number of experiments, but there is no complete theory to explain the relationship between microstructure and dielectric properties, which limits the low-temperature co-firing technology and microwave technology to a large extent. Development of Multilayer Devices
Exploring and developing microwave dielectric ceramics that can be sintered at low temperature and have ultra-low dielectric constant and high quality factor is a problem that those skilled in the art have been eager to solve but have always been difficult to achieve.

Method used

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  • Preparation and application of silicon-based low-dielectric high-quality-factor microwave dielectric ceramic capable of being sintered at low temperature

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] (1) 99.9% analytically pure raw material powder Li 2 CO 3 , SrCO 3 and SiO 2 Press Li 2 SrSiO 4 The composition of weighing ingredients;

[0017] (2) Mix the raw materials of step (1) by wet ball milling for 6 hours, the ball milling medium is alcohol, and pre-burn in the atmosphere at 700° C. for 4 hours after drying;

[0018] (3) The calcined powder obtained in step (2) is ball milled again and then added with a mass percentage concentration of 5% polyvinyl alcohol solution and granulated, the polyvinyl alcohol solution dosage accounts for 2% of the total powder mass; then compression molding, finally Sintered in the atmosphere at 880°C for 4 hours to obtain a silicon-based low dielectric high quality factor microwave dielectric ceramic Li 2 SrSiO 4 .

Embodiment 2

[0020] (1) 99.9% analytically pure raw material powder Li 2 CO 3 , SrCO 3 and SiO 2 Press Li 2 SrSiO 4 The composition of weighing ingredients;

[0021] (2) Mix the raw materials of step (1) by wet ball milling for 6 hours, the ball milling medium is alcohol, and pre-burn in the atmosphere at 700° C. for 4 hours after drying;

[0022] (3) Combine the calcined powder obtained in step (2) with 99.9% analytically pure SiTiO 3 Powder press 0.96Li 2 SrSiO 4 -0.04SrTiO 3 Weighing, after ball milling again, add polyvinyl alcohol solution with a mass percentage concentration of 5% and granulate, the dosage of polyvinyl alcohol solution accounts for 3% of the total powder mass; then press molding, and finally sinter at 880°C for 4 hours in the atmosphere , to obtain silicon-based low dielectric high quality factor microwave dielectric ceramic 0.96Li 2 SrSiO 4 -0.04SrTiO 3 .

Embodiment 3

[0024] (1) 99.9% analytically pure raw material powder Li 2 CO 3 , SrCO 3 and SiO 2 Press Li 2 SrSiO 4 The composition of weighing ingredients;

[0025] (2) Mix the raw materials of step (1) by wet ball milling for 6 hours, the ball milling medium is alcohol, and pre-burn in the atmosphere at 700° C. for 4 hours after drying;

[0026] (3) Combine the calcined powder obtained in step (2) with 99.9% analytically pure SiTiO 3 Powder press 0.94Li 2 SrSiO 4 -0.06SrTiO 3 Weighing, after ball milling again, add polyvinyl alcohol solution with a mass percentage concentration of 5% and granulate, the dosage of polyvinyl alcohol solution accounts for 4% of the total powder mass; then press molding, and finally sinter at 880°C for 4 hours in the atmosphere , to obtain silicon-based low dielectric high quality factor microwave dielectric ceramic 0.94Li 2 SrSiO 4 -0.06SrTiO 3 .

[0027] The ceramics can be widely used in the manufacture of various ceramic substrates, dielectric ...

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Abstract

The invention discloses preparation and application of silicon-based low-dielectric high-quality-factor microwave dielectric ceramic capable of being sintered at low temperature. The preparation comprises the steps: (1) weighing and proportioning Li2CO3, SrCO3 and SiO2 according to the composition of Li2SrSiO4; (2) ball-milling and mixing for 6 hours by using alcohol as a ball-milling medium, drying and then pre-sintering; and (3) weighing the pre-sintered powder and SiTiO3 powder according to (1-x)Li2SrSiO4-xSrTiO3 (wherein x is the volume percent (0<=x<=0.06)), after ball milling is carried out again, adding a polyvinyl alcohol solution is added, carrying out granulation, carrying out compression molding, and finally sintering in the air atmosphere. The prepared silicon-based low-dielectric high-quality-factor microwave dielectric ceramic has the dielectric constant of 7.4-8.2, the quality factor up to 63,200-100,700 GHz and the temperature coefficient of resonance frequency close to zero, and can be applied to manufacturing of microwave components such as various ceramic substrates, dielectric resonators and filters.

Description

technical field [0001] The invention relates to dielectric ceramic materials, in particular to the preparation and application of ceramic substrates, resonators, filters and other microwave components used at microwave frequencies, as well as ceramic capacitors or temperature compensation capacitors. Background technique [0002] Microwave dielectric ceramics refer to materials used in microwave frequency band (300Mz~300Hz) circuits as a medium and complete one or more functions such as microwave waveguide, shielding and resonance, and have become the key basic materials of modern mobile communication technology. The three important indicators to measure the performance of microwave dielectric materials are the dielectric constant ε r , quality factor Q×f and resonant frequency temperature coefficient τ f . Among them, the dielectric constant is inversely proportional to the size of the device, which determines the size of the component; a high quality factor is conducive ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/16C04B35/622H01P1/20H01P7/10H03H3/02
CPCC04B35/16C04B35/622H03H3/02H01P7/10H01P1/2002C04B2235/3236C04B2235/442C04B2235/3418C04B2235/96
Inventor 李洁唐莹方亮
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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